TY - JOUR

T1 - The model for in-plane and out-of-plane growth regimes of semiconductor nanowires

AU - Berdnikov, Y.

AU - Sibirev, N. V.

AU - Reznik, R. R.

AU - Redkov, A. V.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2019/12/20

Y1 - 2019/12/20

N2 - In this work we present the model capable of prediction whether the vapor-liquid-solid growth would preferably result in the formation of in-plane (horizontal) or out-of-plane (vertical or inclined) nanowires. Within the model, we analyze the particular case of gold-catalyzed germanium nanowire growth on Ge(111), Ge(110) and Si(100) substrates. We focus on two aspects of the growth process: detachment of the catalyst from the substrate and stabilization of horizontal growth by nucleation at the nanowire-substrate-liquid line.

AB - In this work we present the model capable of prediction whether the vapor-liquid-solid growth would preferably result in the formation of in-plane (horizontal) or out-of-plane (vertical or inclined) nanowires. Within the model, we analyze the particular case of gold-catalyzed germanium nanowire growth on Ge(111), Ge(110) and Si(100) substrates. We focus on two aspects of the growth process: detachment of the catalyst from the substrate and stabilization of horizontal growth by nucleation at the nanowire-substrate-liquid line.

UR - http://www.scopus.com/inward/record.url?scp=85078093990&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1410/1/012049

DO - 10.1088/1742-6596/1410/1/012049

M3 - Conference article

AN - SCOPUS:85078093990

VL - 1410

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012049

T2 - 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019

Y2 - 22 April 2019 through 25 April 2019

ER -