Standard

Test object for calibrating the transmission electron microscope. / Vasil'Ev, A. L.; Gavrilenko, V. P.; Koval'Chuk, M. V.; Mityukhlyaev, V. B.; Ozerin, Yu V.; Rakov, A. V.; Roddatis, V. V.; Todua, P. A.; Filippov, M. N.

в: Russian Microelectronics, Том 42, № 3, 05.2013, стр. 155-159.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Vasil'Ev, AL, Gavrilenko, VP, Koval'Chuk, MV, Mityukhlyaev, VB, Ozerin, YV, Rakov, AV, Roddatis, VV, Todua, PA & Filippov, MN 2013, 'Test object for calibrating the transmission electron microscope', Russian Microelectronics, Том. 42, № 3, стр. 155-159. https://doi.org/10.1134/S1063739713030098

APA

Vasil'Ev, A. L., Gavrilenko, V. P., Koval'Chuk, M. V., Mityukhlyaev, V. B., Ozerin, Y. V., Rakov, A. V., Roddatis, V. V., Todua, P. A., & Filippov, M. N. (2013). Test object for calibrating the transmission electron microscope. Russian Microelectronics, 42(3), 155-159. https://doi.org/10.1134/S1063739713030098

Vancouver

Vasil'Ev AL, Gavrilenko VP, Koval'Chuk MV, Mityukhlyaev VB, Ozerin YV, Rakov AV и пр. Test object for calibrating the transmission electron microscope. Russian Microelectronics. 2013 Май;42(3):155-159. https://doi.org/10.1134/S1063739713030098

Author

Vasil'Ev, A. L. ; Gavrilenko, V. P. ; Koval'Chuk, M. V. ; Mityukhlyaev, V. B. ; Ozerin, Yu V. ; Rakov, A. V. ; Roddatis, V. V. ; Todua, P. A. ; Filippov, M. N. / Test object for calibrating the transmission electron microscope. в: Russian Microelectronics. 2013 ; Том 42, № 3. стр. 155-159.

BibTeX

@article{939fe307aa534c61a68fa6933aeadfcb,
title = "Test object for calibrating the transmission electron microscope",
abstract = "A new test object for calibrating the transmission electron microscope and scanning transmission microscope is suggested. The test was fabricated by means of cutting the silicon relief structure with the attested sizes of relief elements, which allowed us to use it both in the range of large magnifications (with the direct observation of the crystal lattice) and in the range of medium (near 30000) magnifications.",
author = "Vasil'Ev, {A. L.} and Gavrilenko, {V. P.} and Koval'Chuk, {M. V.} and Mityukhlyaev, {V. B.} and Ozerin, {Yu V.} and Rakov, {A. V.} and Roddatis, {V. V.} and Todua, {P. A.} and Filippov, {M. N.}",
note = "Funding Information: ACKNOWLEDGMENTS This study was supported by the Ministry of Educa tion and Science of the Russian Federation, state con tract no. 16.523.12.3005; using the Equipment of the Collective Use Centers of the Moscow Institute of Physics and Technology and the National Research Center of Surface and Vacuum Properties.",
year = "2013",
month = may,
doi = "10.1134/S1063739713030098",
language = "English",
volume = "42",
pages = "155--159",
journal = "Russian Microelectronics",
issn = "1063-7397",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "3",

}

RIS

TY - JOUR

T1 - Test object for calibrating the transmission electron microscope

AU - Vasil'Ev, A. L.

AU - Gavrilenko, V. P.

AU - Koval'Chuk, M. V.

AU - Mityukhlyaev, V. B.

AU - Ozerin, Yu V.

AU - Rakov, A. V.

AU - Roddatis, V. V.

AU - Todua, P. A.

AU - Filippov, M. N.

N1 - Funding Information: ACKNOWLEDGMENTS This study was supported by the Ministry of Educa tion and Science of the Russian Federation, state con tract no. 16.523.12.3005; using the Equipment of the Collective Use Centers of the Moscow Institute of Physics and Technology and the National Research Center of Surface and Vacuum Properties.

PY - 2013/5

Y1 - 2013/5

N2 - A new test object for calibrating the transmission electron microscope and scanning transmission microscope is suggested. The test was fabricated by means of cutting the silicon relief structure with the attested sizes of relief elements, which allowed us to use it both in the range of large magnifications (with the direct observation of the crystal lattice) and in the range of medium (near 30000) magnifications.

AB - A new test object for calibrating the transmission electron microscope and scanning transmission microscope is suggested. The test was fabricated by means of cutting the silicon relief structure with the attested sizes of relief elements, which allowed us to use it both in the range of large magnifications (with the direct observation of the crystal lattice) and in the range of medium (near 30000) magnifications.

UR - http://www.scopus.com/inward/record.url?scp=84877768547&partnerID=8YFLogxK

U2 - 10.1134/S1063739713030098

DO - 10.1134/S1063739713030098

M3 - Article

AN - SCOPUS:84877768547

VL - 42

SP - 155

EP - 159

JO - Russian Microelectronics

JF - Russian Microelectronics

SN - 1063-7397

IS - 3

ER -

ID: 88210846