Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide

в: Glass Physics and Chemistry, Том 29, № 4, 2003, стр. 422-427.

Результаты исследований: Научные публикации в периодических изданиях › статья

Kalinina, MV, Moshnikov, VA, Tikhonov, PA, Tomaev, VV & Mikhailichenko, SV 2003, 'Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide', Glass Physics and Chemistry, Том. 29, № 4, стр. 422-427.

Kalinina, M. V., Moshnikov, V. A., Tikhonov, P. A., Tomaev, V. V., & Mikhailichenko, S. V. (2003). Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide. Glass Physics and Chemistry, 29(4), 422-427.

Kalinina MV, Moshnikov VA, Tikhonov PA, Tomaev VV, Mikhailichenko SV. Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide. Glass Physics and Chemistry. 2003;29(4):422-427.

Kalinina, M.V. ; Moshnikov, V.A. ; Tikhonov, P.A. ; Tomaev, V.V. ; Mikhailichenko, S.V. / Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide. в: Glass Physics and Chemistry. 2003 ; Том 29, № 4. стр. 422-427.

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