Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide

In: Glass Physics and Chemistry, Vol. 29, No. 4, 2003, p. 422-427.

Research output: Contribution to journal › Article

Kalinina, MV, Moshnikov, VA, Tikhonov, PA, Tomaev, VV & Mikhailichenko, SV 2003, 'Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide', Glass Physics and Chemistry, vol. 29, no. 4, pp. 422-427.

Kalinina, M. V., Moshnikov, V. A., Tikhonov, P. A., Tomaev, V. V., & Mikhailichenko, S. V. (2003). Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide. Glass Physics and Chemistry, 29(4), 422-427.

Kalinina MV, Moshnikov VA, Tikhonov PA, Tomaev VV, Mikhailichenko SV. Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide. Glass Physics and Chemistry. 2003;29(4):422-427.

Kalinina, M.V. ; Moshnikov, V.A. ; Tikhonov, P.A. ; Tomaev, V.V. ; Mikhailichenko, S.V. / Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide. In: Glass Physics and Chemistry. 2003 ; Vol. 29, No. 4. pp. 422-427.

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title = "Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide",

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