Temperature annealing effect on ITO film › Научные исследования в СПбГУ

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Temperature annealing effect on ITO film. / Kotlyar, K. P.; Kudryashov, D. A.; Soshnikov, I. P.; Uvarov, A. V.; Reznik, R. R.

в: Journal of Physics: Conference Series, Том 1124, № 4, 041035, 2018.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Kotlyar, KP, Kudryashov, DA, Soshnikov, IP, Uvarov, AV & Reznik, RR 2018, 'Temperature annealing effect on ITO film', Journal of Physics: Conference Series, Том. 1124, № 4, 041035. https://doi.org/10.1088/1742-6596/1124/4/041035

APA

Kotlyar, K. P., Kudryashov, D. A., Soshnikov, I. P., Uvarov, A. V., & Reznik, R. R. (2018). Temperature annealing effect on ITO film. Journal of Physics: Conference Series, 1124(4), [041035]. https://doi.org/10.1088/1742-6596/1124/4/041035

Vancouver

Kotlyar KP, Kudryashov DA, Soshnikov IP, Uvarov AV, Reznik RR. Temperature annealing effect on ITO film. Journal of Physics: Conference Series. 2018;1124(4). 041035. https://doi.org/10.1088/1742-6596/1124/4/041035

Author

Kotlyar, K. P. ; Kudryashov, D. A. ; Soshnikov, I. P. ; Uvarov, A. V. ; Reznik, R. R. / Temperature annealing effect on ITO film. в: Journal of Physics: Conference Series. 2018 ; Том 1124, № 4.

BibTeX

@article{41b38a64bb304967a462e88455e47a4e,

title = "Temperature annealing effect on ITO film",

abstract = "In the work we investigate processing and optoelectronic properties of ITO films coated on glass and Si substrates using RF magnetron deposition. Temperature annealing modifies the properties of the ITO film that affects the final characteristics of devices where they are used. It was discovered that a great change of characteristics is observed by annealing under the temperature of 200C: the increase of the transmission up to 90% and decrease of film resistance from 160 to 40 Ohm•-1. The ρc is 4•10-3Ω•cm2 for Au and 2•10-3Ω•cm2 for Ag contacts.",

author = "Kotlyar, {K. P.} and Kudryashov, {D. A.} and Soshnikov, {I. P.} and Uvarov, {A. V.} and Reznik, {R. R.}",

note = "Publisher Copyright: {\textcopyright} 2018 Institute of Physics Publishing. All rights reserved.; 5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2018 ; Conference date: 02-04-2018 Through 05-04-2018",

year = "2018",

doi = "10.1088/1742-6596/1124/4/041035",

language = "English",

volume = "1124",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "4",

url = "http://spbopen2018.spbau.com/, http://ru.spbopen.spbau.com/",

}

RIS

TY - JOUR

T1 - Temperature annealing effect on ITO film

AU - Kotlyar, K. P.

AU - Kudryashov, D. A.

AU - Soshnikov, I. P.

AU - Uvarov, A. V.

AU - Reznik, R. R.

PY - 2018

Y1 - 2018

N2 - In the work we investigate processing and optoelectronic properties of ITO films coated on glass and Si substrates using RF magnetron deposition. Temperature annealing modifies the properties of the ITO film that affects the final characteristics of devices where they are used. It was discovered that a great change of characteristics is observed by annealing under the temperature of 200C: the increase of the transmission up to 90% and decrease of film resistance from 160 to 40 Ohm•-1. The ρc is 4•10-3Ω•cm2 for Au and 2•10-3Ω•cm2 for Ag contacts.

AB - In the work we investigate processing and optoelectronic properties of ITO films coated on glass and Si substrates using RF magnetron deposition. Temperature annealing modifies the properties of the ITO film that affects the final characteristics of devices where they are used. It was discovered that a great change of characteristics is observed by annealing under the temperature of 200C: the increase of the transmission up to 90% and decrease of film resistance from 160 to 40 Ohm•-1. The ρc is 4•10-3Ω•cm2 for Au and 2•10-3Ω•cm2 for Ag contacts.

UR - http://www.scopus.com/inward/record.url?scp=85060991902&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1124/4/041035

DO - 10.1088/1742-6596/1124/4/041035

M3 - Conference article

AN - SCOPUS:85060991902

VL - 1124

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 4

M1 - 041035

T2 - 5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2018

Y2 - 2 April 2018 through 5 April 2018

ER -

ID: 98506971