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Synthesis of thin-layer structures by the ionic layer deposition method. / Tolstoi, V. P.

в: Russian Chemical Reviews, Том 62, № 3, 31.03.1993, стр. 237-242.

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Tolstoi, V. P. / Synthesis of thin-layer structures by the ionic layer deposition method. в: Russian Chemical Reviews. 1993 ; Том 62, № 3. стр. 237-242.

BibTeX

@article{deef60ac63a145929688ac0dc99ec409,
title = "Synthesis of thin-layer structures by the ionic layer deposition method",
abstract = "A review is presented of ionic layer deposition, one of tbe methods of synthesising thin-layer structures of a predetermined composition with very precise thickness control on the surface of a support. Conditions for the synthesis of ultra-thin films of metal oxides, hydroxides, phosphates, chromates, sulphides, and tellurides on the surface of metals, semiconductors, and dielectrics are discussed. The advantages of the method are pointed out, including the possibility of synthesising layers in an automatic regime under mild conditions at room temperature on substrates of complex shape by using simple apparatus. The problems which prevent the wider use of the method are formulated, and ways of solving them are suggested. The bibliography includes 69 references.",
author = "Tolstoi, {V. P.}",
year = "1993",
month = mar,
day = "31",
doi = "10.1070/RC1993v062n03ABEH000015",
language = "English",
volume = "62",
pages = "237--242",
journal = "Russian Chemical Reviews",
issn = "0036-021X",
publisher = "Turpion Ltd.",
number = "3",

}

RIS

TY - JOUR

T1 - Synthesis of thin-layer structures by the ionic layer deposition method

AU - Tolstoi, V. P.

PY - 1993/3/31

Y1 - 1993/3/31

N2 - A review is presented of ionic layer deposition, one of tbe methods of synthesising thin-layer structures of a predetermined composition with very precise thickness control on the surface of a support. Conditions for the synthesis of ultra-thin films of metal oxides, hydroxides, phosphates, chromates, sulphides, and tellurides on the surface of metals, semiconductors, and dielectrics are discussed. The advantages of the method are pointed out, including the possibility of synthesising layers in an automatic regime under mild conditions at room temperature on substrates of complex shape by using simple apparatus. The problems which prevent the wider use of the method are formulated, and ways of solving them are suggested. The bibliography includes 69 references.

AB - A review is presented of ionic layer deposition, one of tbe methods of synthesising thin-layer structures of a predetermined composition with very precise thickness control on the surface of a support. Conditions for the synthesis of ultra-thin films of metal oxides, hydroxides, phosphates, chromates, sulphides, and tellurides on the surface of metals, semiconductors, and dielectrics are discussed. The advantages of the method are pointed out, including the possibility of synthesising layers in an automatic regime under mild conditions at room temperature on substrates of complex shape by using simple apparatus. The problems which prevent the wider use of the method are formulated, and ways of solving them are suggested. The bibliography includes 69 references.

UR - http://www.scopus.com/inward/record.url?scp=33748960977&partnerID=8YFLogxK

U2 - 10.1070/RC1993v062n03ABEH000015

DO - 10.1070/RC1993v062n03ABEH000015

M3 - Article

AN - SCOPUS:33748960977

VL - 62

SP - 237

EP - 242

JO - Russian Chemical Reviews

JF - Russian Chemical Reviews

SN - 0036-021X

IS - 3

ER -

ID: 42175806