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Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface. / Nazarov, D. V.; Osmolovskaya, O. M.; Smirnov, V. M.; Murin, I. V.; Loshachenko, A. S.

в: Russian Journal of General Chemistry, Том 83, № 8, 08.2013, стр. 1586-1588.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Nazarov, DV, Osmolovskaya, OM, Smirnov, VM, Murin, IV & Loshachenko, AS 2013, 'Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface', Russian Journal of General Chemistry, Том. 83, № 8, стр. 1586-1588. https://doi.org/10.1134/S1070363213080185, https://doi.org/10.1134/S1070363213080185

APA

Nazarov, D. V., Osmolovskaya, O. M., Smirnov, V. M., Murin, I. V., & Loshachenko, A. S. (2013). Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface. Russian Journal of General Chemistry, 83(8), 1586-1588. https://doi.org/10.1134/S1070363213080185, https://doi.org/10.1134/S1070363213080185

Vancouver

Nazarov DV, Osmolovskaya OM, Smirnov VM, Murin IV, Loshachenko AS. Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface. Russian Journal of General Chemistry. 2013 Авг.;83(8):1586-1588. https://doi.org/10.1134/S1070363213080185, https://doi.org/10.1134/S1070363213080185

Author

Nazarov, D. V. ; Osmolovskaya, O. M. ; Smirnov, V. M. ; Murin, I. V. ; Loshachenko, A. S. / Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface. в: Russian Journal of General Chemistry. 2013 ; Том 83, № 8. стр. 1586-1588.

BibTeX

@article{378ba2b9216f4468a8d68581b283e67d,
title = "Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface",
abstract = "Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130-160 and 100-110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO 2 affects the phase transition characteristics.",
author = "Nazarov, {D. V.} and Osmolovskaya, {O. M.} and Smirnov, {V. M.} and Murin, {I. V.} and Loshachenko, {A. S.}",
note = "Funding Information: This work was financially supported by the Russian Foundation for Basic Research (project no. 12-03-00244-a).",
year = "2013",
month = aug,
doi = "10.1134/S1070363213080185",
language = "English",
volume = "83",
pages = "1586--1588",
journal = "Russian Journal of General Chemistry",
issn = "1070-3632",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "8",

}

RIS

TY - JOUR

T1 - Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface

AU - Nazarov, D. V.

AU - Osmolovskaya, O. M.

AU - Smirnov, V. M.

AU - Murin, I. V.

AU - Loshachenko, A. S.

N1 - Funding Information: This work was financially supported by the Russian Foundation for Basic Research (project no. 12-03-00244-a).

PY - 2013/8

Y1 - 2013/8

N2 - Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130-160 and 100-110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO 2 affects the phase transition characteristics.

AB - Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130-160 and 100-110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO 2 affects the phase transition characteristics.

UR - http://www.scopus.com/inward/record.url?scp=84885149517&partnerID=8YFLogxK

U2 - 10.1134/S1070363213080185

DO - 10.1134/S1070363213080185

M3 - Article

VL - 83

SP - 1586

EP - 1588

JO - Russian Journal of General Chemistry

JF - Russian Journal of General Chemistry

SN - 1070-3632

IS - 8

ER -

ID: 7389197