Research output: Contribution to journal › Article › peer-review
Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface. / Nazarov, D. V.; Osmolovskaya, O. M.; Smirnov, V. M.; Murin, I. V.; Loshachenko, A. S.
In: Russian Journal of General Chemistry, Vol. 83, No. 8, 08.2013, p. 1586-1588.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Synthesis and electrophysical characteristics of VO2-based nanostructures with a complicated architecture on a silicon surface
AU - Nazarov, D. V.
AU - Osmolovskaya, O. M.
AU - Smirnov, V. M.
AU - Murin, I. V.
AU - Loshachenko, A. S.
N1 - Funding Information: This work was financially supported by the Russian Foundation for Basic Research (project no. 12-03-00244-a).
PY - 2013/8
Y1 - 2013/8
N2 - Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130-160 and 100-110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO 2 affects the phase transition characteristics.
AB - Nanofilms of complicated architecture based on VO2 and containing chromium were synthesized by the molecular layering method. The study of electrophysical characteristics of vanadium dioxide nanocrystallites and of VO2-containing chromium has shown that semiconductor-metal phase transitions appear in the ranges of 130-160 and 100-110 K, respectively. The introduction of a transition-element ion in the nanostructures based on VO 2 affects the phase transition characteristics.
UR - http://www.scopus.com/inward/record.url?scp=84885149517&partnerID=8YFLogxK
U2 - 10.1134/S1070363213080185
DO - 10.1134/S1070363213080185
M3 - Article
VL - 83
SP - 1586
EP - 1588
JO - Russian Journal of General Chemistry
JF - Russian Journal of General Chemistry
SN - 1070-3632
IS - 8
ER -
ID: 7389197