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Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering. / Bazlov, N.; Pilipenko, N.; Vyvenko, O.; Kotina, I.; Petrov, Yu.; Mikhailovskii, V.; Ubyivovk, E.; Zharinov, V.

Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering. American Institute of Physics, 2016.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › Рецензирование

Harvard

Bazlov, N, Pilipenko, N, Vyvenko, O, Kotina, I, Petrov, Y, Mikhailovskii, V, Ubyivovk, E & Zharinov, V 2016, Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering. в Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering. American Institute of Physics, 5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, Saint Petersburg, Российская Федерация, 26/04/16. https://doi.org/10.1063/1.4954356

APA

Bazlov, N., Pilipenko, N., Vyvenko, O., Kotina, I., Petrov, Y., Mikhailovskii, V., Ubyivovk, E., & Zharinov, V. (2016). Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering. в Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering American Institute of Physics. https://doi.org/10.1063/1.4954356

Vancouver

Bazlov N, Pilipenko N, Vyvenko O, Kotina I, Petrov Y, Mikhailovskii V и пр. Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering. в Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering. American Institute of Physics. 2016 https://doi.org/10.1063/1.4954356

Author

Bazlov, N. ; Pilipenko, N. ; Vyvenko, O. ; Kotina, I. ; Petrov, Yu. ; Mikhailovskii, V. ; Ubyivovk, E. ; Zharinov, V. / Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering. Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering. American Institute of Physics, 2016.

BibTeX

@inproceedings{87bb7d5d602f45dba7d57bd70891ea53,
title = "Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering",
abstract = "AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained traps of positive charges with concentration of about 4 x 10(18) cm(-3). Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance",
author = "N. Bazlov and N. Pilipenko and O. Vyvenko and I. Kotina and Yu. Petrov and V. Mikhailovskii and E. Ubyivovk and V. Zharinov",
year = "2016",
doi = "10.1063/1.4954356",
language = "English",
isbn = "9780735414051",
booktitle = "Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering",
publisher = "American Institute of Physics",
address = "United States",
note = "5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016 ; Conference date: 26-04-2016 Through 29-04-2016",
url = "http://www.globaleventslist.elsevier.com/events/2016/04/strann-2016-state-of-the-art-trends-of-scientific-research-of-artificial-and-natural-nanoobjects/, http://eibl.spbu.ru/strann-2016/",

}

RIS

TY - GEN

T1 - Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering

AU - Bazlov, N.

AU - Pilipenko, N.

AU - Vyvenko, O.

AU - Kotina, I.

AU - Petrov, Yu.

AU - Mikhailovskii, V.

AU - Ubyivovk, E.

AU - Zharinov, V.

N1 - Conference code: 5

PY - 2016

Y1 - 2016

N2 - AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained traps of positive charges with concentration of about 4 x 10(18) cm(-3). Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance

AB - AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained traps of positive charges with concentration of about 4 x 10(18) cm(-3). Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance

U2 - 10.1063/1.4954356

DO - 10.1063/1.4954356

M3 - Conference contribution

SN - 9780735414051

BT - Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering

PB - American Institute of Physics

T2 - 5th International Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects

Y2 - 26 April 2016 through 29 April 2016

ER -

ID: 7928204