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Spin dynamics in the charged InP quantum dots. / Ignatiev, I.V.; Gerlovin, I.Ya.; Verbin, S.Yu.; Yugova, I.A.; Masumoto, Y.

Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM). 2002.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференции

Harvard

Ignatiev, IV, Gerlovin, IY, Verbin, SY, Yugova, IA & Masumoto, Y 2002, Spin dynamics in the charged InP quantum dots. в Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM). Physics of Semiconductors 2002, Edinburgh, Российская Федерация, 29/07/02. <http://elibrary.ru/item.asp?id=15036402>

APA

Ignatiev, I. V., Gerlovin, I. Y., Verbin, S. Y., Yugova, I. A., & Masumoto, Y. (2002). Spin dynamics in the charged InP quantum dots. в Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM) http://elibrary.ru/item.asp?id=15036402

Vancouver

Ignatiev IV, Gerlovin IY, Verbin SY, Yugova IA, Masumoto Y. Spin dynamics in the charged InP quantum dots. в Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM). 2002

Author

Ignatiev, I.V. ; Gerlovin, I.Ya. ; Verbin, S.Yu. ; Yugova, I.A. ; Masumoto, Y. / Spin dynamics in the charged InP quantum dots. Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM). 2002.

BibTeX

@inproceedings{49d83fbd82cf4402b0ad8f3430a86b93,
title = "Spin dynamics in the charged InP quantum dots",
abstract = "Kinetics of polarized photoluminescence (PL) of the InPquantum dots with variable number of resident electrons is studied. Along-lived component of the degree of circular polarisation of the PL isfound to be present for charged quantum dots and absent for neutral ones.Behaviour of the long-lived polarisation in longitudinal and transversemagnetic field is studied. Experimental data obtained allowed us toconclude that the long-lived polarisation is related to spin orientation inthe quantum dots containing odd number of carriers. We found that theirreversible spin relaxation time in these dots substantially exceeds 1 ns.",
author = "I.V. Ignatiev and I.Ya. Gerlovin and S.Yu. Verbin and I.A. Yugova and Y. Masumoto",
year = "2002",
language = "English",
booktitle = "Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM)",
note = "Physics of Semiconductors 2002 : the 26th International Conference ; Conference date: 29-07-2002 Through 02-08-2002",

}

RIS

TY - GEN

T1 - Spin dynamics in the charged InP quantum dots

AU - Ignatiev, I.V.

AU - Gerlovin, I.Ya.

AU - Verbin, S.Yu.

AU - Yugova, I.A.

AU - Masumoto, Y.

PY - 2002

Y1 - 2002

N2 - Kinetics of polarized photoluminescence (PL) of the InPquantum dots with variable number of resident electrons is studied. Along-lived component of the degree of circular polarisation of the PL isfound to be present for charged quantum dots and absent for neutral ones.Behaviour of the long-lived polarisation in longitudinal and transversemagnetic field is studied. Experimental data obtained allowed us toconclude that the long-lived polarisation is related to spin orientation inthe quantum dots containing odd number of carriers. We found that theirreversible spin relaxation time in these dots substantially exceeds 1 ns.

AB - Kinetics of polarized photoluminescence (PL) of the InPquantum dots with variable number of resident electrons is studied. Along-lived component of the degree of circular polarisation of the PL isfound to be present for charged quantum dots and absent for neutral ones.Behaviour of the long-lived polarisation in longitudinal and transversemagnetic field is studied. Experimental data obtained allowed us toconclude that the long-lived polarisation is related to spin orientation inthe quantum dots containing odd number of carriers. We found that theirreversible spin relaxation time in these dots substantially exceeds 1 ns.

M3 - Conference contribution

BT - Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM)

T2 - Physics of Semiconductors 2002

Y2 - 29 July 2002 through 2 August 2002

ER -

ID: 4406576