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Spin dynamics in the charged InP quantum dots. / Ignatiev, I.V.; Gerlovin, I.Ya.; Verbin, S.Yu.; Yugova, I.A.; Masumoto, Y.

Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM). 2002.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Harvard

Ignatiev, IV, Gerlovin, IY, Verbin, SY, Yugova, IA & Masumoto, Y 2002, Spin dynamics in the charged InP quantum dots. in Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM). Physics of Semiconductors 2002, Edinburgh, Russian Federation, 29/07/02. <http://elibrary.ru/item.asp?id=15036402>

APA

Ignatiev, I. V., Gerlovin, I. Y., Verbin, S. Y., Yugova, I. A., & Masumoto, Y. (2002). Spin dynamics in the charged InP quantum dots. In Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM) http://elibrary.ru/item.asp?id=15036402

Vancouver

Ignatiev IV, Gerlovin IY, Verbin SY, Yugova IA, Masumoto Y. Spin dynamics in the charged InP quantum dots. In Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM). 2002

Author

Ignatiev, I.V. ; Gerlovin, I.Ya. ; Verbin, S.Yu. ; Yugova, I.A. ; Masumoto, Y. / Spin dynamics in the charged InP quantum dots. Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM). 2002.

BibTeX

@inproceedings{49d83fbd82cf4402b0ad8f3430a86b93,
title = "Spin dynamics in the charged InP quantum dots",
abstract = "Kinetics of polarized photoluminescence (PL) of the InPquantum dots with variable number of resident electrons is studied. Along-lived component of the degree of circular polarisation of the PL isfound to be present for charged quantum dots and absent for neutral ones.Behaviour of the long-lived polarisation in longitudinal and transversemagnetic field is studied. Experimental data obtained allowed us toconclude that the long-lived polarisation is related to spin orientation inthe quantum dots containing odd number of carriers. We found that theirreversible spin relaxation time in these dots substantially exceeds 1 ns.",
author = "I.V. Ignatiev and I.Ya. Gerlovin and S.Yu. Verbin and I.A. Yugova and Y. Masumoto",
year = "2002",
language = "English",
booktitle = "Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM)",
note = "Physics of Semiconductors 2002 : the 26th International Conference ; Conference date: 29-07-2002 Through 02-08-2002",

}

RIS

TY - GEN

T1 - Spin dynamics in the charged InP quantum dots

AU - Ignatiev, I.V.

AU - Gerlovin, I.Ya.

AU - Verbin, S.Yu.

AU - Yugova, I.A.

AU - Masumoto, Y.

PY - 2002

Y1 - 2002

N2 - Kinetics of polarized photoluminescence (PL) of the InPquantum dots with variable number of resident electrons is studied. Along-lived component of the degree of circular polarisation of the PL isfound to be present for charged quantum dots and absent for neutral ones.Behaviour of the long-lived polarisation in longitudinal and transversemagnetic field is studied. Experimental data obtained allowed us toconclude that the long-lived polarisation is related to spin orientation inthe quantum dots containing odd number of carriers. We found that theirreversible spin relaxation time in these dots substantially exceeds 1 ns.

AB - Kinetics of polarized photoluminescence (PL) of the InPquantum dots with variable number of resident electrons is studied. Along-lived component of the degree of circular polarisation of the PL isfound to be present for charged quantum dots and absent for neutral ones.Behaviour of the long-lived polarisation in longitudinal and transversemagnetic field is studied. Experimental data obtained allowed us toconclude that the long-lived polarisation is related to spin orientation inthe quantum dots containing odd number of carriers. We found that theirreversible spin relaxation time in these dots substantially exceeds 1 ns.

M3 - Conference contribution

BT - Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002 (on CD-ROM)

T2 - Physics of Semiconductors 2002

Y2 - 29 July 2002 through 2 August 2002

ER -

ID: 4406576