Spin accumulation and spin Hall effect in a two-layer system with a thin ferromagnetic layer

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Spin accumulation and spin Hall effect in a two-layer system with a thin ferromagnetic layer. / Журавлев, Михаил Евгеньевич; Alexandrov, Artem; Vedyayev, Anatoly.

в: Journal of Physics: Condensed Matter, Том 34, № 14, 145301, 06.04.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{69a9c1fe20ba4c0894a00d31051b3d03,

title = "Spin accumulation and spin Hall effect in a two-layer system with a thin ferromagnetic layer",

abstract = "Spin accumulation and spin current are phenomena that enhance the functionality of the devices operating with charge and spin. We calculated them for the system consisting of a ferroelectric barrier and a thin ferromagnetic layer when the current flows parallel to the interface. We assume Dresselhaus and Rashba spin–orbit coupling linear in electron wave number.We demonstrate that spin accumulation and spin current can be manipulated by changing the direction of the magnetization of the FM layer with respect to the crystallographic axes of the ferroelectric barrier.",

keywords = "spin–orbit coupling, spin Hall effect, spin accumulation, heterostructures, spintronics, heterostructures, spin Hall effect, spin accumulation, spin-orbit coupling, spintronics, ELECTRONS, MAGNETIZATION",

author = "Журавлев, {Михаил Евгеньевич} and Artem Alexandrov and Anatoly Vedyayev",

note = "Publisher Copyright: {\textcopyright} 2022 IOP Publishing Ltd.",

year = "2022",

month = apr,

day = "6",

doi = "10.1088/1361-648x/ac4c65",

language = "English",

volume = "34",

journal = "Journal of Physics Condensed Matter",

issn = "0953-8984",

publisher = "IOP Publishing Ltd.",

number = "14",

}

RIS

TY - JOUR

T1 - Spin accumulation and spin Hall effect in a two-layer system with a thin ferromagnetic layer

AU - Журавлев, Михаил Евгеньевич

AU - Alexandrov, Artem

AU - Vedyayev, Anatoly

PY - 2022/4/6

Y1 - 2022/4/6

N2 - Spin accumulation and spin current are phenomena that enhance the functionality of the devices operating with charge and spin. We calculated them for the system consisting of a ferroelectric barrier and a thin ferromagnetic layer when the current flows parallel to the interface. We assume Dresselhaus and Rashba spin–orbit coupling linear in electron wave number.We demonstrate that spin accumulation and spin current can be manipulated by changing the direction of the magnetization of the FM layer with respect to the crystallographic axes of the ferroelectric barrier.

AB - Spin accumulation and spin current are phenomena that enhance the functionality of the devices operating with charge and spin. We calculated them for the system consisting of a ferroelectric barrier and a thin ferromagnetic layer when the current flows parallel to the interface. We assume Dresselhaus and Rashba spin–orbit coupling linear in electron wave number.We demonstrate that spin accumulation and spin current can be manipulated by changing the direction of the magnetization of the FM layer with respect to the crystallographic axes of the ferroelectric barrier.

KW - spin–orbit coupling, spin Hall effect, spin accumulation, heterostructures, spintronics

KW - heterostructures

KW - spin Hall effect

KW - spin accumulation

KW - spin-orbit coupling

KW - spintronics

KW - ELECTRONS

KW - MAGNETIZATION

UR - http://www.scopus.com/inward/record.url?scp=85123969246&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/a7ea8d73-85cb-3569-9421-9587f6617918/

U2 - 10.1088/1361-648x/ac4c65

DO - 10.1088/1361-648x/ac4c65

M3 - Article

VL - 34

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 14

M1 - 145301

ER -

ID: 92255420