Spin accumulation and spin current are phenomena that enhance the functionality of the devices operating with charge and spin. We calculated them for the system consisting of a ferroelectric barrier and a thin ferromagnetic layer when the current flows parallel to the interface. We assume Dresselhaus and Rashba spin–orbit coupling linear in electron wave number.We demonstrate that spin accumulation and spin current can be manipulated by changing the direction of the magnetization of the FM layer with respect to the crystallographic axes of the ferroelectric barrier.