Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties. / Cirlin, G. E.; Reznik, R. R.; Zhukov, A. E.; Khabibullin, R. A.; Maremyanin, K. V.; Gavrilenko, V. I.; Morozov, S. V.
в: Semiconductors, Том 54, № 9, 01.09.2020, стр. 1092-1095.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties
AU - Cirlin, G. E.
AU - Reznik, R. R.
AU - Zhukov, A. E.
AU - Khabibullin, R. A.
AU - Maremyanin, K. V.
AU - Gavrilenko, V. I.
AU - Morozov, S. V.
N1 - Publisher Copyright: © 2020, Pleiades Publishing, Ltd.
PY - 2020/9/1
Y1 - 2020/9/1
N2 - Abstract: Data on the synthesis of structures for a quantum cascade terahertz laser in the AlGaAs/GaAs material system on GaAs substrates using the molecular-beam-epitaxy method and their characterization are presented. The specific features necessary for the implementation of such structures are considered. It is shown that, for this configuration, almost single-mode lasing is observed at a frequency of ~3 THz up to a temperature of ~60 K.
AB - Abstract: Data on the synthesis of structures for a quantum cascade terahertz laser in the AlGaAs/GaAs material system on GaAs substrates using the molecular-beam-epitaxy method and their characterization are presented. The specific features necessary for the implementation of such structures are considered. It is shown that, for this configuration, almost single-mode lasing is observed at a frequency of ~3 THz up to a temperature of ~60 K.
KW - molecular-beam epitaxy
KW - quantum-cascade laser
KW - semiconductor nanostructures
KW - terahertz radiation
UR - http://www.scopus.com/inward/record.url?scp=85090362863&partnerID=8YFLogxK
U2 - 10.1134/S1063782620090298
DO - 10.1134/S1063782620090298
M3 - Article
AN - SCOPUS:85090362863
VL - 54
SP - 1092
EP - 1095
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 9
ER -
ID: 98504975