Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties

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Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties. / Cirlin, G. E.; Reznik, R. R.; Zhukov, A. E.; Khabibullin, R. A.; Maremyanin, K. V.; Gavrilenko, V. I.; Morozov, S. V.

In: Semiconductors, Vol. 54, No. 9, 01.09.2020, p. 1092-1095.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{8df9b80bd9fb4ece8b363e3e453da9a6,

title = "Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties",

abstract = "Abstract: Data on the synthesis of structures for a quantum cascade terahertz laser in the AlGaAs/GaAs material system on GaAs substrates using the molecular-beam-epitaxy method and their characterization are presented. The specific features necessary for the implementation of such structures are considered. It is shown that, for this configuration, almost single-mode lasing is observed at a frequency of ~3 THz up to a temperature of ~60 K.",

keywords = "molecular-beam epitaxy, quantum-cascade laser, semiconductor nanostructures, terahertz radiation",

author = "Cirlin, {G. E.} and Reznik, {R. R.} and Zhukov, {A. E.} and Khabibullin, {R. A.} and Maremyanin, {K. V.} and Gavrilenko, {V. I.} and Morozov, {S. V.}",

note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd.",

year = "2020",

month = sep,

day = "1",

doi = "10.1134/S1063782620090298",

language = "English",

volume = "54",

pages = "1092--1095",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "9",

}

RIS

TY - JOUR

T1 - Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties

AU - Cirlin, G. E.

AU - Reznik, R. R.

AU - Zhukov, A. E.

AU - Khabibullin, R. A.

AU - Maremyanin, K. V.

AU - Gavrilenko, V. I.

AU - Morozov, S. V.

PY - 2020/9/1

Y1 - 2020/9/1

N2 - Abstract: Data on the synthesis of structures for a quantum cascade terahertz laser in the AlGaAs/GaAs material system on GaAs substrates using the molecular-beam-epitaxy method and their characterization are presented. The specific features necessary for the implementation of such structures are considered. It is shown that, for this configuration, almost single-mode lasing is observed at a frequency of ~3 THz up to a temperature of ~60 K.

AB - Abstract: Data on the synthesis of structures for a quantum cascade terahertz laser in the AlGaAs/GaAs material system on GaAs substrates using the molecular-beam-epitaxy method and their characterization are presented. The specific features necessary for the implementation of such structures are considered. It is shown that, for this configuration, almost single-mode lasing is observed at a frequency of ~3 THz up to a temperature of ~60 K.

KW - molecular-beam epitaxy

KW - quantum-cascade laser

KW - semiconductor nanostructures

KW - terahertz radiation

UR - http://www.scopus.com/inward/record.url?scp=85090362863&partnerID=8YFLogxK

U2 - 10.1134/S1063782620090298

DO - 10.1134/S1063782620090298

M3 - Article

AN - SCOPUS:85090362863

VL - 54

SP - 1092

EP - 1095

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 98504975