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Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms. / Chereau, Emmanuel; Dubrovskii, Vladimir G.; Diak, Ethan; Semlali, Elias; Avit, Geoffrey; Trassoudaine, Agnès; Gil, Evelyne; LaPierre, Ray; André, Yamina.

в: ACS Applied Nano Materials, Том 7, № 15, 29.07.2024, стр. 17417–17423.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Chereau, E, Dubrovskii, VG, Diak, E, Semlali, E, Avit, G, Trassoudaine, A, Gil, E, LaPierre, R & André, Y 2024, 'Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms', ACS Applied Nano Materials, Том. 7, № 15, стр. 17417–17423. https://doi.org/DOI: 10.1021/acsanm.4c02466, https://doi.org/10.1021/acsanm.4c02466

APA

Chereau, E., Dubrovskii, V. G., Diak, E., Semlali, E., Avit, G., Trassoudaine, A., Gil, E., LaPierre, R., & André, Y. (2024). Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms. ACS Applied Nano Materials, 7(15), 17417–17423. https://doi.org/DOI: 10.1021/acsanm.4c02466, https://doi.org/10.1021/acsanm.4c02466

Vancouver

Chereau E, Dubrovskii VG, Diak E, Semlali E, Avit G, Trassoudaine A и пр. Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms. ACS Applied Nano Materials. 2024 Июль 29;7(15):17417–17423. https://doi.org/DOI: 10.1021/acsanm.4c02466, https://doi.org/10.1021/acsanm.4c02466

Author

Chereau, Emmanuel ; Dubrovskii, Vladimir G. ; Diak, Ethan ; Semlali, Elias ; Avit, Geoffrey ; Trassoudaine, Agnès ; Gil, Evelyne ; LaPierre, Ray ; André, Yamina. / Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms. в: ACS Applied Nano Materials. 2024 ; Том 7, № 15. стр. 17417–17423.

BibTeX

@article{7145d2badcce49c1aafde27919186c4d,
title = "Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms",
abstract = "Nanowires (NWs) are promising for the integration of III-V compound-based electrical and optical devices on Si. Selective area growth (SAG) of InxGa1-xAs NWs with compositions x varying from 0.34 to 0.90 is achieved. NWs are grown on patterned Si(111) substrates by hydride vapor phase epitaxy (HVPE) at temperatures around 690 °C. The composition is measured using EDX profiles along their lengths and found to be quite homogeneous. Theoretical analysis revealed that the NW composition is kinetically controlled and well-fit by the one-parametric Langmuir-McLean formula, with no thermodynamic factors influencing the compositional trend. This study highlights the capability of catalyst-free HVPE SAG to grow highly uniform InGaAs NW arrays with a widely tunable composition on Si substrates.",
keywords = "EDX, HVPE, InGaAs, composition, nanowires",
author = "Emmanuel Chereau and Dubrovskii, {Vladimir G.} and Ethan Diak and Elias Semlali and Geoffrey Avit and Agn{\`e}s Trassoudaine and Evelyne Gil and Ray LaPierre and Yamina Andr{\'e}",
year = "2024",
month = jul,
day = "29",
doi = "DOI: 10.1021/acsanm.4c02466",
language = "English",
volume = "7",
pages = "17417–17423",
journal = "ACS Applied Nano Materials",
issn = "2574-0970",
publisher = "American Chemical Society",
number = "15",

}

RIS

TY - JOUR

T1 - Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms

AU - Chereau, Emmanuel

AU - Dubrovskii, Vladimir G.

AU - Diak, Ethan

AU - Semlali, Elias

AU - Avit, Geoffrey

AU - Trassoudaine, Agnès

AU - Gil, Evelyne

AU - LaPierre, Ray

AU - André, Yamina

PY - 2024/7/29

Y1 - 2024/7/29

N2 - Nanowires (NWs) are promising for the integration of III-V compound-based electrical and optical devices on Si. Selective area growth (SAG) of InxGa1-xAs NWs with compositions x varying from 0.34 to 0.90 is achieved. NWs are grown on patterned Si(111) substrates by hydride vapor phase epitaxy (HVPE) at temperatures around 690 °C. The composition is measured using EDX profiles along their lengths and found to be quite homogeneous. Theoretical analysis revealed that the NW composition is kinetically controlled and well-fit by the one-parametric Langmuir-McLean formula, with no thermodynamic factors influencing the compositional trend. This study highlights the capability of catalyst-free HVPE SAG to grow highly uniform InGaAs NW arrays with a widely tunable composition on Si substrates.

AB - Nanowires (NWs) are promising for the integration of III-V compound-based electrical and optical devices on Si. Selective area growth (SAG) of InxGa1-xAs NWs with compositions x varying from 0.34 to 0.90 is achieved. NWs are grown on patterned Si(111) substrates by hydride vapor phase epitaxy (HVPE) at temperatures around 690 °C. The composition is measured using EDX profiles along their lengths and found to be quite homogeneous. Theoretical analysis revealed that the NW composition is kinetically controlled and well-fit by the one-parametric Langmuir-McLean formula, with no thermodynamic factors influencing the compositional trend. This study highlights the capability of catalyst-free HVPE SAG to grow highly uniform InGaAs NW arrays with a widely tunable composition on Si substrates.

KW - EDX

KW - HVPE

KW - InGaAs

KW - composition

KW - nanowires

UR - https://www.mendeley.com/catalogue/1f9a0d40-5a8a-320e-9f93-94967ccc2e05/

U2 - DOI: 10.1021/acsanm.4c02466

DO - DOI: 10.1021/acsanm.4c02466

M3 - Article

VL - 7

SP - 17417

EP - 17423

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

SN - 2574-0970

IS - 15

ER -

ID: 124349591