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Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography : Experiment and Theory. / Gridchin, Vladislav O.; Dvoretckaia, Liliia N.; Kotlyar, Konstantin P.; Reznik, Rodion R.; Parfeneva, Alesya V.; Dragunova, Anna S.; Kryzhanovskaya, Natalia V.; Dubrovskii, Vladimir G.; Cirlin, George E.

в: Nanomaterials, Том 12, № 14, 2341, 08.07.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Gridchin, VO, Dvoretckaia, LN, Kotlyar, KP, Reznik, RR, Parfeneva, AV, Dragunova, AS, Kryzhanovskaya, NV, Dubrovskii, VG & Cirlin, GE 2022, 'Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory', Nanomaterials, Том. 12, № 14, 2341. https://doi.org/10.3390/nano12142341

APA

Gridchin, V. O., Dvoretckaia, L. N., Kotlyar, K. P., Reznik, R. R., Parfeneva, A. V., Dragunova, A. S., Kryzhanovskaya, N. V., Dubrovskii, V. G., & Cirlin, G. E. (2022). Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory. Nanomaterials, 12(14), [2341]. https://doi.org/10.3390/nano12142341

Vancouver

Gridchin VO, Dvoretckaia LN, Kotlyar KP, Reznik RR, Parfeneva AV, Dragunova AS и пр. Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory. Nanomaterials. 2022 Июль 8;12(14). 2341. https://doi.org/10.3390/nano12142341

Author

Gridchin, Vladislav O. ; Dvoretckaia, Liliia N. ; Kotlyar, Konstantin P. ; Reznik, Rodion R. ; Parfeneva, Alesya V. ; Dragunova, Anna S. ; Kryzhanovskaya, Natalia V. ; Dubrovskii, Vladimir G. ; Cirlin, George E. / Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography : Experiment and Theory. в: Nanomaterials. 2022 ; Том 12, № 14.

BibTeX

@article{ecafbae5f55f404fa8001bf6905f10f2,
title = "Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory",
abstract = "GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N2 flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growth selectivity for GaN nanowires without any parasitic growth on a silica mask can be obtained in a relatively narrow range of substrate temperatures and Ga/N2 flux ratios. A model was developed that explains the selective growth range, which appeared to be highly sensitive to the growth temperature and Ga flux, as well as to the radius and pitch of the patterned pinholes. High crystal quality in the GaN nanowires was confirmed through low-temperature photoluminescence measurements.",
keywords = "GaN nanowires, modeling, molecular beam epitaxy, optical properties, selective area growth",
author = "Gridchin, {Vladislav O.} and Dvoretckaia, {Liliia N.} and Kotlyar, {Konstantin P.} and Reznik, {Rodion R.} and Parfeneva, {Alesya V.} and Dragunova, {Anna S.} and Kryzhanovskaya, {Natalia V.} and Dubrovskii, {Vladimir G.} and Cirlin, {George E.}",
note = "Publisher Copyright: {\textcopyright} 2022 by the authors.",
year = "2022",
month = jul,
day = "8",
doi = "10.3390/nano12142341",
language = "English",
volume = "12",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "14",

}

RIS

TY - JOUR

T1 - Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography

T2 - Experiment and Theory

AU - Gridchin, Vladislav O.

AU - Dvoretckaia, Liliia N.

AU - Kotlyar, Konstantin P.

AU - Reznik, Rodion R.

AU - Parfeneva, Alesya V.

AU - Dragunova, Anna S.

AU - Kryzhanovskaya, Natalia V.

AU - Dubrovskii, Vladimir G.

AU - Cirlin, George E.

N1 - Publisher Copyright: © 2022 by the authors.

PY - 2022/7/8

Y1 - 2022/7/8

N2 - GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N2 flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growth selectivity for GaN nanowires without any parasitic growth on a silica mask can be obtained in a relatively narrow range of substrate temperatures and Ga/N2 flux ratios. A model was developed that explains the selective growth range, which appeared to be highly sensitive to the growth temperature and Ga flux, as well as to the radius and pitch of the patterned pinholes. High crystal quality in the GaN nanowires was confirmed through low-temperature photoluminescence measurements.

AB - GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N2 flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growth selectivity for GaN nanowires without any parasitic growth on a silica mask can be obtained in a relatively narrow range of substrate temperatures and Ga/N2 flux ratios. A model was developed that explains the selective growth range, which appeared to be highly sensitive to the growth temperature and Ga flux, as well as to the radius and pitch of the patterned pinholes. High crystal quality in the GaN nanowires was confirmed through low-temperature photoluminescence measurements.

KW - GaN nanowires

KW - modeling

KW - molecular beam epitaxy

KW - optical properties

KW - selective area growth

UR - http://www.scopus.com/inward/record.url?scp=85137335374&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/0d2db4f5-f71a-3183-aec2-36a26831e3e1/

U2 - 10.3390/nano12142341

DO - 10.3390/nano12142341

M3 - Article

C2 - 35889566

AN - SCOPUS:85137335374

VL - 12

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 14

M1 - 2341

ER -

ID: 99878588