TY - CHAP

T1 - Re-distribution of Oxygen at the Metal/Oxide Interface

AU - Filatova, Elena Olegovna

AU - Konashuk, Aleksei

AU - Sakhonenkov, Sergei

PY - 2019

Y1 - 2019

N2 - Today there is no doubt that oxygen re-distribution at the metal/oxide interface represents the major driving force ofinterface barrier and effective work function (EWF) variation, at the same time atomic picture of this crucial processremains incomplete: most of the attention has been devoted so far to the electron states inside the near-interfaceinsulating layer leading to the break of electro-neutrality while the ―fate‖ of oxygen leaving the insulating film as wellas its influence on the EWF remains unknown. The complexity of the problem is related to formation of interlayers (ILs)at the metal/insulator interfaces due to interdiffusion and chemical reactions during the synthesis of such systems.Analysis of different metal-oxide-semiconductor gate stacks reveals the increasingly important role of such ILs, whichmay impact the functionality of the devices by, for example, affecting the EWF of electrodes. To progress towardsbetter understanding the physics and chemistry of the metal/oxide interface barrier formation, the physical mechanismbehind the metal/insulator barrier variations will be studied using X-ray spectroscopic methods for the practicallyrelevant stacks used in charge trapping (flash) memory cells and in advanced logic and memory semiconductor devices.Also the influence of different ILs grown by atomic layer deposition process between the TiN electrode and oxide insome stacks on the amount of oxidized Ti at the interface will be demonstrated. It will be shown that the amount of TiO2phase can be effectively controlled, i.e., increased or decreased, during the atomic layer deposition process enablingengineering of vacancy-mediated processes.

AB - Today there is no doubt that oxygen re-distribution at the metal/oxide interface represents the major driving force ofinterface barrier and effective work function (EWF) variation, at the same time atomic picture of this crucial processremains incomplete: most of the attention has been devoted so far to the electron states inside the near-interfaceinsulating layer leading to the break of electro-neutrality while the ―fate‖ of oxygen leaving the insulating film as wellas its influence on the EWF remains unknown. The complexity of the problem is related to formation of interlayers (ILs)at the metal/insulator interfaces due to interdiffusion and chemical reactions during the synthesis of such systems.Analysis of different metal-oxide-semiconductor gate stacks reveals the increasingly important role of such ILs, whichmay impact the functionality of the devices by, for example, affecting the EWF of electrodes. To progress towardsbetter understanding the physics and chemistry of the metal/oxide interface barrier formation, the physical mechanismbehind the metal/insulator barrier variations will be studied using X-ray spectroscopic methods for the practicallyrelevant stacks used in charge trapping (flash) memory cells and in advanced logic and memory semiconductor devices.Also the influence of different ILs grown by atomic layer deposition process between the TiN electrode and oxide insome stacks on the amount of oxidized Ti at the interface will be demonstrated. It will be shown that the amount of TiO2phase can be effectively controlled, i.e., increased or decreased, during the atomic layer deposition process enablingengineering of vacancy-mediated processes.

M3 - Other chapter contribution

SP - 236

BT - BIT‟s 7th Annual Conference of AnalytiX-2019

T2 - BIT‟s 7th Annual Conference of AnalytiX-2019

Y2 - 12 April 2019 through 14 April 2019

ER -