Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces. / Talalaev, V. G.; Novikov, B. V.; Verbin, S. Yu; Novikov, A. B.; Thath, Dinh Son; Shchur, I. V.; Gobsch, G.; Goldhahn, R.; Stein, N.; Golombek, A.; Tsyrlin, G. É; Petrov, V. N.; Ustinov, V. M.; Zhukov, A. E.; Egorov, A. Yu.
в: Semiconductors, Том 34, № 4, 01.2000, стр. 453-461.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces
AU - Talalaev, V. G.
AU - Novikov, B. V.
AU - Verbin, S. Yu
AU - Novikov, A. B.
AU - Thath, Dinh Son
AU - Shchur, I. V.
AU - Gobsch, G.
AU - Goldhahn, R.
AU - Stein, N.
AU - Golombek, A.
AU - Tsyrlin, G. É
AU - Petrov, V. N.
AU - Ustinov, V. M.
AU - Zhukov, A. E.
AU - Egorov, A. Yu
PY - 2000/1
Y1 - 2000/1
N2 - Photoluminescence (PL) spectra of InAs/GaAs heteroepitaxial structures with quantum dots (QDs) have been studied. The structures were grown by submonolayer migration-enhanced epitaxy on vicinal substrates with the amount of deposited InAs close to the critical value of 1.8 monolayer (ML). The origin and evolution of the structure of PL spectra were studied in relation to the direction and angle of misorientation, temperature, and power density and spectrum of the exciting radiation. A blue shift and narrowing of the PL band with increasing misorientation angle was established experimentally. The fact that QDs become smaller and more uniform in size is explained in terms of a lateral confinement of QDs on terraces with account taken of the step bunching effect. The temperature dependences of the positions and full widths at half-maximum (FWHM) of PL bands are fundamentally different for isolated and associated QDs. The exciton ground states contribute to all low-temperature spectral components. The excited exciton state contributes to the recombination emission from QDs, as evidenced by the temperature dependence of the integrated intensity of the PL bands. A quantitative estimate is given of the electronic structure of different families of InAs QDs grown on GaAs substrates misoriented by 7° in the [001] direction.
AB - Photoluminescence (PL) spectra of InAs/GaAs heteroepitaxial structures with quantum dots (QDs) have been studied. The structures were grown by submonolayer migration-enhanced epitaxy on vicinal substrates with the amount of deposited InAs close to the critical value of 1.8 monolayer (ML). The origin and evolution of the structure of PL spectra were studied in relation to the direction and angle of misorientation, temperature, and power density and spectrum of the exciting radiation. A blue shift and narrowing of the PL band with increasing misorientation angle was established experimentally. The fact that QDs become smaller and more uniform in size is explained in terms of a lateral confinement of QDs on terraces with account taken of the step bunching effect. The temperature dependences of the positions and full widths at half-maximum (FWHM) of PL bands are fundamentally different for isolated and associated QDs. The exciton ground states contribute to all low-temperature spectral components. The excited exciton state contributes to the recombination emission from QDs, as evidenced by the temperature dependence of the integrated intensity of the PL bands. A quantitative estimate is given of the electronic structure of different families of InAs QDs grown on GaAs substrates misoriented by 7° in the [001] direction.
UR - http://www.scopus.com/inward/record.url?scp=0034164874&partnerID=8YFLogxK
U2 - 10.1134/1.1188007
DO - 10.1134/1.1188007
M3 - Article
AN - SCOPUS:0034164874
VL - 34
SP - 453
EP - 461
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 4
ER -
ID: 36131413