TY - JOUR

T1 - Raman spectroscopy of monoatomic hydrogen at dislocations in silicon

AU - Vysotskii, N.

AU - Loshachenko, A.

AU - Borisov, E

AU - Vyvenko, O.

PY - 2016

Y1 - 2016

N2 - A broad Raman peak at about 2000 cm-1 was found in hydrogenated silicon foils with a regular dislocation network (DN) produced by silicon wafer bonding. It was not observed in the reference foils without a dislocation network. The hydrogenation was performed from acid water solution at room temperature. The peak was ascribed to monoatomic hydrogen in silicon bond centered position that became stable in a close vicinity to the dislocation cores in opposite to the case of the regular lattice where its molecular form is energetically favorable.

AB - A broad Raman peak at about 2000 cm-1 was found in hydrogenated silicon foils with a regular dislocation network (DN) produced by silicon wafer bonding. It was not observed in the reference foils without a dislocation network. The hydrogenation was performed from acid water solution at room temperature. The peak was ascribed to monoatomic hydrogen in silicon bond centered position that became stable in a close vicinity to the dislocation cores in opposite to the case of the regular lattice where its molecular form is energetically favorable.

U2 - 10.1088/1742-6596/690/1/012004

DO - 10.1088/1742-6596/690/1/012004

M3 - Article

VL - 690

SP - 012004

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

ER -