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Raman spectroscopy of monoatomic hydrogen at dislocations in silicon. / Vysotskii, N.; Loshachenko, A.; Borisov, E; Vyvenko, O.

In: Journal of Physics: Conference Series, Vol. 690, No. 1, 2016, p. 012004.

Research output: Contribution to journal › Article › peer-review

Harvard

Vysotskii, N, Loshachenko, A, Borisov, E & Vyvenko, O 2016, 'Raman spectroscopy of monoatomic hydrogen at dislocations in silicon', Journal of Physics: Conference Series, vol. 690, no. 1, pp. 012004. https://doi.org/10.1088/1742-6596/690/1/012004

APA

Vysotskii, N., Loshachenko, A., Borisov, E., & Vyvenko, O. (2016). Raman spectroscopy of monoatomic hydrogen at dislocations in silicon. Journal of Physics: Conference Series, 690(1), 012004. https://doi.org/10.1088/1742-6596/690/1/012004

Vancouver

Vysotskii N, Loshachenko A, Borisov E, Vyvenko O. Raman spectroscopy of monoatomic hydrogen at dislocations in silicon. Journal of Physics: Conference Series. 2016;690(1):012004. https://doi.org/10.1088/1742-6596/690/1/012004

Author

Vysotskii, N. ; Loshachenko, A. ; Borisov, E ; Vyvenko, O. / Raman spectroscopy of monoatomic hydrogen at dislocations in silicon. In: Journal of Physics: Conference Series. 2016 ; Vol. 690, No. 1. pp. 012004.

BibTeX

@article{0c0562a9c94248f3b953bf975f43d9b4,
title = "Raman spectroscopy of monoatomic hydrogen at dislocations in silicon",
abstract = "A broad Raman peak at about 2000 cm-1 was found in hydrogenated silicon foils with a regular dislocation network (DN) produced by silicon wafer bonding. It was not observed in the reference foils without a dislocation network. The hydrogenation was performed from acid water solution at room temperature. The peak was ascribed to monoatomic hydrogen in silicon bond centered position that became stable in a close vicinity to the dislocation cores in opposite to the case of the regular lattice where its molecular form is energetically favorable.",
author = "N. Vysotskii and A. Loshachenko and E Borisov and O. Vyvenko",
year = "2016",
doi = "10.1088/1742-6596/690/1/012004",
language = "English",
volume = "690",
pages = "012004",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Raman spectroscopy of monoatomic hydrogen at dislocations in silicon

AU - Vysotskii, N.

AU - Loshachenko, A.

AU - Borisov, E

AU - Vyvenko, O.

PY - 2016

Y1 - 2016

N2 - A broad Raman peak at about 2000 cm-1 was found in hydrogenated silicon foils with a regular dislocation network (DN) produced by silicon wafer bonding. It was not observed in the reference foils without a dislocation network. The hydrogenation was performed from acid water solution at room temperature. The peak was ascribed to monoatomic hydrogen in silicon bond centered position that became stable in a close vicinity to the dislocation cores in opposite to the case of the regular lattice where its molecular form is energetically favorable.

AB - A broad Raman peak at about 2000 cm-1 was found in hydrogenated silicon foils with a regular dislocation network (DN) produced by silicon wafer bonding. It was not observed in the reference foils without a dislocation network. The hydrogenation was performed from acid water solution at room temperature. The peak was ascribed to monoatomic hydrogen in silicon bond centered position that became stable in a close vicinity to the dislocation cores in opposite to the case of the regular lattice where its molecular form is energetically favorable.

U2 - 10.1088/1742-6596/690/1/012004

DO - 10.1088/1742-6596/690/1/012004

M3 - Article

VL - 690

SP - 012004

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

ER -

ID: 7639063