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Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis. / Usachov, D.; Adamchuk, V. K.; Haberer, D.; Grüneis, A.; Sachdev, H.; Preobrajenski, A. B.; Laubschat, C.; Vyalikh, D. V.

в: Physical Review B - Condensed Matter and Materials Physics, Том 82, № 7, 075415, 17.08.2010.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Usachov, D, Adamchuk, VK, Haberer, D, Grüneis, A, Sachdev, H, Preobrajenski, AB, Laubschat, C & Vyalikh, DV 2010, 'Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis', Physical Review B - Condensed Matter and Materials Physics, Том. 82, № 7, 075415. https://doi.org/10.1103/PhysRevB.82.075415

APA

Usachov, D., Adamchuk, V. K., Haberer, D., Grüneis, A., Sachdev, H., Preobrajenski, A. B., Laubschat, C., & Vyalikh, D. V. (2010). Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis. Physical Review B - Condensed Matter and Materials Physics, 82(7), [075415]. https://doi.org/10.1103/PhysRevB.82.075415

Vancouver

Usachov D, Adamchuk VK, Haberer D, Grüneis A, Sachdev H, Preobrajenski AB и пр. Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis. Physical Review B - Condensed Matter and Materials Physics. 2010 Авг. 17;82(7). 075415. https://doi.org/10.1103/PhysRevB.82.075415

Author

Usachov, D. ; Adamchuk, V. K. ; Haberer, D. ; Grüneis, A. ; Sachdev, H. ; Preobrajenski, A. B. ; Laubschat, C. ; Vyalikh, D. V. / Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis. в: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Том 82, № 7.

BibTeX

@article{2dfe51a4de724f3cbd20cf24dd00c46f,
title = "Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis",
abstract = "We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h -BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h -BN layer from the {"}rigid{"} into the {"}quasifreestanding{"} state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h -BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/ h -BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.",
author = "D. Usachov and Adamchuk, {V. K.} and D. Haberer and A. Gr{\"u}neis and H. Sachdev and Preobrajenski, {A. B.} and C. Laubschat and Vyalikh, {D. V.}",
year = "2010",
month = aug,
day = "17",
doi = "10.1103/PhysRevB.82.075415",
language = "English",
volume = "82",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

AU - Usachov, D.

AU - Adamchuk, V. K.

AU - Haberer, D.

AU - Grüneis, A.

AU - Sachdev, H.

AU - Preobrajenski, A. B.

AU - Laubschat, C.

AU - Vyalikh, D. V.

PY - 2010/8/17

Y1 - 2010/8/17

N2 - We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h -BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h -BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h -BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/ h -BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.

AB - We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h -BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h -BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h -BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/ h -BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.

UR - http://www.scopus.com/inward/record.url?scp=77957566181&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.82.075415

DO - 10.1103/PhysRevB.82.075415

M3 - Article

AN - SCOPUS:77957566181

VL - 82

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 7

M1 - 075415

ER -

ID: 85410600