Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h -BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h -BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h -BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/ h -BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.
Язык оригинала | английский |
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Номер статьи | 075415 |
Журнал | Physical Review B - Condensed Matter and Materials Physics |
Том | 82 |
Номер выпуска | 7 |
DOI | |
Состояние | Опубликовано - 17 авг 2010 |
ID: 85410600