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Planar vs Non-Planar Orientation in AuAg-Catalyzed InP Nanowire Growth. / Zavarize, Mariana; Sibirev, Nikolai V.; Berdnikov, Yury; Moreira, Murilo; Obata, Hélio T.; Rodrigues, Varlei; Dubrovskii, Vladimir G.; Cotta, Mônica A.

в: Crystal Growth and Design, Том 23, № 9, 22.08.2023, стр. 6623–6630.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zavarize, M, Sibirev, NV, Berdnikov, Y, Moreira, M, Obata, HT, Rodrigues, V, Dubrovskii, VG & Cotta, MA 2023, 'Planar vs Non-Planar Orientation in AuAg-Catalyzed InP Nanowire Growth', Crystal Growth and Design, Том. 23, № 9, стр. 6623–6630. https://doi.org/10.1021/acs.cgd.3c00542, https://doi.org/10.1021/acs.cgd.3c00542

APA

Zavarize, M., Sibirev, N. V., Berdnikov, Y., Moreira, M., Obata, H. T., Rodrigues, V., Dubrovskii, V. G., & Cotta, M. A. (2023). Planar vs Non-Planar Orientation in AuAg-Catalyzed InP Nanowire Growth. Crystal Growth and Design, 23(9), 6623–6630. https://doi.org/10.1021/acs.cgd.3c00542, https://doi.org/10.1021/acs.cgd.3c00542

Vancouver

Zavarize M, Sibirev NV, Berdnikov Y, Moreira M, Obata HT, Rodrigues V и пр. Planar vs Non-Planar Orientation in AuAg-Catalyzed InP Nanowire Growth. Crystal Growth and Design. 2023 Авг. 22;23(9):6623–6630. https://doi.org/10.1021/acs.cgd.3c00542, https://doi.org/10.1021/acs.cgd.3c00542

Author

Zavarize, Mariana ; Sibirev, Nikolai V. ; Berdnikov, Yury ; Moreira, Murilo ; Obata, Hélio T. ; Rodrigues, Varlei ; Dubrovskii, Vladimir G. ; Cotta, Mônica A. / Planar vs Non-Planar Orientation in AuAg-Catalyzed InP Nanowire Growth. в: Crystal Growth and Design. 2023 ; Том 23, № 9. стр. 6623–6630.

BibTeX

@article{fa2815a5bf5b489b9233e740f2494b59,
title = "Planar vs Non-Planar Orientation in AuAg-Catalyzed InP Nanowire Growth",
abstract = "Nanowire integration into current processing technologies remains an important challenge regarding scalable device fabrication, particularly for metal-catalyzed III-V nanowires integrated with Si-based electronics. Controlling nanowire orientation, either in or out of a substrate plane, by using different metal catalysts may work as a tool to address these issues. Here, we report an extensive investigation of InP nanowires catalyzed by Au, Ag, and AuxAg1-x nanoparticles grown on GaAs substrates with different orientations. Using statistical analysis of the experimental data and modeling, we show that the ratio of the droplet surface density over the In precursor flux is the key parameter controlling the nanowire growth mode and spatial orientation. Overall, these results provide further understanding of the vapor-liquid-solid growth of planar nanowires and allow us to find tools for the control of growth orientation of III-V nanowires catalyzed by different metallic nanoparticles on lattice-mismatched substrates.",
author = "Mariana Zavarize and Sibirev, {Nikolai V.} and Yury Berdnikov and Murilo Moreira and Obata, {H{\'e}lio T.} and Varlei Rodrigues and Dubrovskii, {Vladimir G.} and Cotta, {M{\^o}nica A.}",
year = "2023",
month = aug,
day = "22",
doi = "10.1021/acs.cgd.3c00542",
language = "English",
volume = "23",
pages = "6623–6630",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "9",

}

RIS

TY - JOUR

T1 - Planar vs Non-Planar Orientation in AuAg-Catalyzed InP Nanowire Growth

AU - Zavarize, Mariana

AU - Sibirev, Nikolai V.

AU - Berdnikov, Yury

AU - Moreira, Murilo

AU - Obata, Hélio T.

AU - Rodrigues, Varlei

AU - Dubrovskii, Vladimir G.

AU - Cotta, Mônica A.

PY - 2023/8/22

Y1 - 2023/8/22

N2 - Nanowire integration into current processing technologies remains an important challenge regarding scalable device fabrication, particularly for metal-catalyzed III-V nanowires integrated with Si-based electronics. Controlling nanowire orientation, either in or out of a substrate plane, by using different metal catalysts may work as a tool to address these issues. Here, we report an extensive investigation of InP nanowires catalyzed by Au, Ag, and AuxAg1-x nanoparticles grown on GaAs substrates with different orientations. Using statistical analysis of the experimental data and modeling, we show that the ratio of the droplet surface density over the In precursor flux is the key parameter controlling the nanowire growth mode and spatial orientation. Overall, these results provide further understanding of the vapor-liquid-solid growth of planar nanowires and allow us to find tools for the control of growth orientation of III-V nanowires catalyzed by different metallic nanoparticles on lattice-mismatched substrates.

AB - Nanowire integration into current processing technologies remains an important challenge regarding scalable device fabrication, particularly for metal-catalyzed III-V nanowires integrated with Si-based electronics. Controlling nanowire orientation, either in or out of a substrate plane, by using different metal catalysts may work as a tool to address these issues. Here, we report an extensive investigation of InP nanowires catalyzed by Au, Ag, and AuxAg1-x nanoparticles grown on GaAs substrates with different orientations. Using statistical analysis of the experimental data and modeling, we show that the ratio of the droplet surface density over the In precursor flux is the key parameter controlling the nanowire growth mode and spatial orientation. Overall, these results provide further understanding of the vapor-liquid-solid growth of planar nanowires and allow us to find tools for the control of growth orientation of III-V nanowires catalyzed by different metallic nanoparticles on lattice-mismatched substrates.

UR - https://www.mendeley.com/catalogue/30b2035c-aa41-3496-8b8e-f51e4ecdd52b/

U2 - 10.1021/acs.cgd.3c00542

DO - 10.1021/acs.cgd.3c00542

M3 - Article

VL - 23

SP - 6623

EP - 6630

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 9

ER -

ID: 108744566