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Photovoltaic properties of InP NWs/p-Si heterostructure. / Kotlyar, K. P.; Vershinin, A. V.; Reznik, R. R.; Pavlov, S. I.; Kudryashov, D. A.; Zelentsov, K. S.; Mozharov, A. M.; Karaborchev, A. A.; Mukhin, I. S.; Soshnikov, I. P.; Cirlin, G. E.

в: Journal of Physics: Conference Series, Том 1410, № 1, 012060, 20.12.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Kotlyar, KP, Vershinin, AV, Reznik, RR, Pavlov, SI, Kudryashov, DA, Zelentsov, KS, Mozharov, AM, Karaborchev, AA, Mukhin, IS, Soshnikov, IP & Cirlin, GE 2019, 'Photovoltaic properties of InP NWs/p-Si heterostructure', Journal of Physics: Conference Series, Том. 1410, № 1, 012060. https://doi.org/10.1088/1742-6596/1410/1/012060

APA

Kotlyar, K. P., Vershinin, A. V., Reznik, R. R., Pavlov, S. I., Kudryashov, D. A., Zelentsov, K. S., Mozharov, A. M., Karaborchev, A. A., Mukhin, I. S., Soshnikov, I. P., & Cirlin, G. E. (2019). Photovoltaic properties of InP NWs/p-Si heterostructure. Journal of Physics: Conference Series, 1410(1), [012060]. https://doi.org/10.1088/1742-6596/1410/1/012060

Vancouver

Kotlyar KP, Vershinin AV, Reznik RR, Pavlov SI, Kudryashov DA, Zelentsov KS и пр. Photovoltaic properties of InP NWs/p-Si heterostructure. Journal of Physics: Conference Series. 2019 Дек. 20;1410(1). 012060. https://doi.org/10.1088/1742-6596/1410/1/012060

Author

Kotlyar, K. P. ; Vershinin, A. V. ; Reznik, R. R. ; Pavlov, S. I. ; Kudryashov, D. A. ; Zelentsov, K. S. ; Mozharov, A. M. ; Karaborchev, A. A. ; Mukhin, I. S. ; Soshnikov, I. P. ; Cirlin, G. E. / Photovoltaic properties of InP NWs/p-Si heterostructure. в: Journal of Physics: Conference Series. 2019 ; Том 1410, № 1.

BibTeX

@article{152cf00737884786abed633ade02b732,
title = "Photovoltaic properties of InP NWs/p-Si heterostructure",
abstract = "The experimental and modelling results of the investigation of photovoltaic properties of the InP nanowires grown on p-Si substrate are presented. It is shown that InP 2D-layer between nanowires on Si is II-type heterojanction. The resulting structure exhibits an open-circuit voltage (Voc) of 0,37 V, a short-circuit current density (Jsc) of 10.6 mA/cm2, a fill factor (FF) of 0.61 and efficiency of 2.4% at 1 sun. The InP/p-Si structure can be applied as prototype for solar cells or the photosensitive component in an integrated circuit based on silicon technology.",
author = "Kotlyar, {K. P.} and Vershinin, {A. V.} and Reznik, {R. R.} and Pavlov, {S. I.} and Kudryashov, {D. A.} and Zelentsov, {K. S.} and Mozharov, {A. M.} and Karaborchev, {A. A.} and Mukhin, {I. S.} and Soshnikov, {I. P.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 ; Conference date: 22-04-2019 Through 25-04-2019",
year = "2019",
month = dec,
day = "20",
doi = "10.1088/1742-6596/1410/1/012060",
language = "English",
volume = "1410",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Photovoltaic properties of InP NWs/p-Si heterostructure

AU - Kotlyar, K. P.

AU - Vershinin, A. V.

AU - Reznik, R. R.

AU - Pavlov, S. I.

AU - Kudryashov, D. A.

AU - Zelentsov, K. S.

AU - Mozharov, A. M.

AU - Karaborchev, A. A.

AU - Mukhin, I. S.

AU - Soshnikov, I. P.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2019/12/20

Y1 - 2019/12/20

N2 - The experimental and modelling results of the investigation of photovoltaic properties of the InP nanowires grown on p-Si substrate are presented. It is shown that InP 2D-layer between nanowires on Si is II-type heterojanction. The resulting structure exhibits an open-circuit voltage (Voc) of 0,37 V, a short-circuit current density (Jsc) of 10.6 mA/cm2, a fill factor (FF) of 0.61 and efficiency of 2.4% at 1 sun. The InP/p-Si structure can be applied as prototype for solar cells or the photosensitive component in an integrated circuit based on silicon technology.

AB - The experimental and modelling results of the investigation of photovoltaic properties of the InP nanowires grown on p-Si substrate are presented. It is shown that InP 2D-layer between nanowires on Si is II-type heterojanction. The resulting structure exhibits an open-circuit voltage (Voc) of 0,37 V, a short-circuit current density (Jsc) of 10.6 mA/cm2, a fill factor (FF) of 0.61 and efficiency of 2.4% at 1 sun. The InP/p-Si structure can be applied as prototype for solar cells or the photosensitive component in an integrated circuit based on silicon technology.

UR - http://www.scopus.com/inward/record.url?scp=85078144081&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1410/1/012060

DO - 10.1088/1742-6596/1410/1/012060

M3 - Conference article

AN - SCOPUS:85078144081

VL - 1410

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012060

T2 - 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019

Y2 - 22 April 2019 through 25 April 2019

ER -

ID: 98506050