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Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers. / Философов, Николай Глебович; Будкин, Григорий; Агекян, Вадим Фадеевич; Карчевский, Гжегош; Серов, Алексей Юрьевич; Вербин, Сергей Юрьевич; Штром, Игорь Викторович; Резницкий, Александр.

в: Semiconductors, Том 58, № 5, 01.05.2024, стр. 406-408.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Философов, НГ, Будкин, Г, Агекян, ВФ, Карчевский, Г, Серов, АЮ, Вербин, СЮ, Штром, ИВ & Резницкий, А 2024, 'Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers', Semiconductors, Том. 58, № 5, стр. 406-408. https://doi.org/10.1134/s1063782624050051

APA

Философов, Н. Г., Будкин, Г., Агекян, В. Ф., Карчевский, Г., Серов, А. Ю., Вербин, С. Ю., Штром, И. В., & Резницкий, А. (2024). Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers. Semiconductors, 58(5), 406-408. https://doi.org/10.1134/s1063782624050051

Vancouver

Философов НГ, Будкин Г, Агекян ВФ, Карчевский Г, Серов АЮ, Вербин СЮ и пр. Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers. Semiconductors. 2024 Май 1;58(5):406-408. https://doi.org/10.1134/s1063782624050051

Author

Философов, Николай Глебович ; Будкин, Григорий ; Агекян, Вадим Фадеевич ; Карчевский, Гжегош ; Серов, Алексей Юрьевич ; Вербин, Сергей Юрьевич ; Штром, Игорь Викторович ; Резницкий, Александр. / Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers. в: Semiconductors. 2024 ; Том 58, № 5. стр. 406-408.

BibTeX

@article{a64a85f41ac84df5bd72c35cd7a316e0,
title = "Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers",
abstract = "The low-temperature photoluminescence (PL) and PL excitation (PLE) spectra of two systems ofCdTe quantum wells (QWs) separated by CdMnTe and CdMgTe barriers 20 nm thick are studied. The exper-imental PL spectra are compared with calculations that take into account the exciton effect and the influenceof internal strains. The scatter of our data does not exceed that expected for monolayer fluctuations of the QWwidth. In the PLE spectra of a thick QW, bands were found that correspond to the increase of PL from a thickQW upon excitation of a neighbor narrow QW. The mechanism of energy transfer between QWs separated bythick barriers is discussed.",
keywords = "CdTe, quantum wells, photoluminescence, CdTe, photoluminescence, photoluminescence excitation, quantum wells",
author = "Философов, {Николай Глебович} and Григорий Будкин and Агекян, {Вадим Фадеевич} and Гжегош Карчевский and Серов, {Алексей Юрьевич} and Вербин, {Сергей Юрьевич} and Штром, {Игорь Викторович} and Александр Резницкий",
year = "2024",
month = may,
day = "1",
doi = "10.1134/s1063782624050051",
language = "English",
volume = "58",
pages = "406--408",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "5",

}

RIS

TY - JOUR

T1 - Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers

AU - Философов, Николай Глебович

AU - Будкин, Григорий

AU - Агекян, Вадим Фадеевич

AU - Карчевский, Гжегош

AU - Серов, Алексей Юрьевич

AU - Вербин, Сергей Юрьевич

AU - Штром, Игорь Викторович

AU - Резницкий, Александр

PY - 2024/5/1

Y1 - 2024/5/1

N2 - The low-temperature photoluminescence (PL) and PL excitation (PLE) spectra of two systems ofCdTe quantum wells (QWs) separated by CdMnTe and CdMgTe barriers 20 nm thick are studied. The exper-imental PL spectra are compared with calculations that take into account the exciton effect and the influenceof internal strains. The scatter of our data does not exceed that expected for monolayer fluctuations of the QWwidth. In the PLE spectra of a thick QW, bands were found that correspond to the increase of PL from a thickQW upon excitation of a neighbor narrow QW. The mechanism of energy transfer between QWs separated bythick barriers is discussed.

AB - The low-temperature photoluminescence (PL) and PL excitation (PLE) spectra of two systems ofCdTe quantum wells (QWs) separated by CdMnTe and CdMgTe barriers 20 nm thick are studied. The exper-imental PL spectra are compared with calculations that take into account the exciton effect and the influenceof internal strains. The scatter of our data does not exceed that expected for monolayer fluctuations of the QWwidth. In the PLE spectra of a thick QW, bands were found that correspond to the increase of PL from a thickQW upon excitation of a neighbor narrow QW. The mechanism of energy transfer between QWs separated bythick barriers is discussed.

KW - CdTe

KW - quantum wells

KW - photoluminescence

KW - CdTe

KW - photoluminescence

KW - photoluminescence excitation

KW - quantum wells

UR - https://rdcu.be/dUg4S

UR - https://www.mendeley.com/catalogue/a3101415-8cfe-3d00-a9fe-328f2f52f3e3/

U2 - 10.1134/s1063782624050051

DO - 10.1134/s1063782624050051

M3 - Article

VL - 58

SP - 406

EP - 408

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -

ID: 124574239