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Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe heterostructures with quantum wells separated by thick barriers. / Философов, Николай Глебович; Будкин, Григорий; Агекян, Вадим Фадеевич; Карчевский, Гжегош; Серов, Алексей Юрьевич; Вербин, Сергей Юрьевич; Штром, Игорь Викторович; Резницкий, Александр.

в: Semiconductors, Том 57, № 7, 2024, стр. 542-544.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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@article{518bf73b81e4404dbec7d9df5d0d8293,
title = "Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe heterostructures with quantum wells separated by thick barriers",
abstract = "The low-temperature photoluminescence (PL) and PL excitation (PLE) spectra of two systems of CdTe quantum wells (QWs) separated by CdMnTe and CdMgTe barriers 20 nm thick are studied. The experimental PL spectra are compared with calculations that take into account the exciton effect and the influence of internal strains. The scatter of our data does not exceed that expected for monolayer fluctuations of the QW width. In the PLE spectra of a thick QW, bands were found that correspond to the increase of PL from a thick QW upon excitation of a neighbor narrow QW. The mechanism of energy transfer between QWs separated by thick barriers is discussed. Keywords: CdTe, quantum wells, photoluminescence, photoluminescence excitation.",
keywords = "CdTe, quantum wells, photoluminescence, photoluminescence excitation",
author = "Философов, {Николай Глебович} and Григорий Будкин and Агекян, {Вадим Фадеевич} and Гжегош Карчевский and Серов, {Алексей Юрьевич} and Вербин, {Сергей Юрьевич} and Штром, {Игорь Викторович} and Александр Резницкий",
year = "2024",
language = "English",
volume = "57",
pages = "542--544",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "7",

}

RIS

TY - JOUR

T1 - Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe heterostructures with quantum wells separated by thick barriers

AU - Философов, Николай Глебович

AU - Будкин, Григорий

AU - Агекян, Вадим Фадеевич

AU - Карчевский, Гжегош

AU - Серов, Алексей Юрьевич

AU - Вербин, Сергей Юрьевич

AU - Штром, Игорь Викторович

AU - Резницкий, Александр

PY - 2024

Y1 - 2024

N2 - The low-temperature photoluminescence (PL) and PL excitation (PLE) spectra of two systems of CdTe quantum wells (QWs) separated by CdMnTe and CdMgTe barriers 20 nm thick are studied. The experimental PL spectra are compared with calculations that take into account the exciton effect and the influence of internal strains. The scatter of our data does not exceed that expected for monolayer fluctuations of the QW width. In the PLE spectra of a thick QW, bands were found that correspond to the increase of PL from a thick QW upon excitation of a neighbor narrow QW. The mechanism of energy transfer between QWs separated by thick barriers is discussed. Keywords: CdTe, quantum wells, photoluminescence, photoluminescence excitation.

AB - The low-temperature photoluminescence (PL) and PL excitation (PLE) spectra of two systems of CdTe quantum wells (QWs) separated by CdMnTe and CdMgTe barriers 20 nm thick are studied. The experimental PL spectra are compared with calculations that take into account the exciton effect and the influence of internal strains. The scatter of our data does not exceed that expected for monolayer fluctuations of the QW width. In the PLE spectra of a thick QW, bands were found that correspond to the increase of PL from a thick QW upon excitation of a neighbor narrow QW. The mechanism of energy transfer between QWs separated by thick barriers is discussed. Keywords: CdTe, quantum wells, photoluminescence, photoluminescence excitation.

KW - CdTe

KW - quantum wells

KW - photoluminescence

KW - photoluminescence excitation

M3 - Article

VL - 57

SP - 542

EP - 544

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 7

ER -

ID: 119201691