Standard

Optically controlled excitonic transistor. / Andreakou, P.; Poltavtsev, S.V.; Leonard, J.R.; Calman, E.V.; Remeika, M.; Kuznetsova, Y.Y.; Butov, L.V.; Wilkes, J.; Hanson, M.; Gossard, A.C.

в: Applied Physics Letters, Том 104, № 9, 2014, стр. 091101_1-4.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Andreakou, P, Poltavtsev, SV, Leonard, JR, Calman, EV, Remeika, M, Kuznetsova, YY, Butov, LV, Wilkes, J, Hanson, M & Gossard, AC 2014, 'Optically controlled excitonic transistor', Applied Physics Letters, Том. 104, № 9, стр. 091101_1-4. https://doi.org/10.1063/1.4866855

APA

Andreakou, P., Poltavtsev, S. V., Leonard, J. R., Calman, E. V., Remeika, M., Kuznetsova, Y. Y., Butov, L. V., Wilkes, J., Hanson, M., & Gossard, A. C. (2014). Optically controlled excitonic transistor. Applied Physics Letters, 104(9), 091101_1-4. https://doi.org/10.1063/1.4866855

Vancouver

Andreakou P, Poltavtsev SV, Leonard JR, Calman EV, Remeika M, Kuznetsova YY и пр. Optically controlled excitonic transistor. Applied Physics Letters. 2014;104(9):091101_1-4. https://doi.org/10.1063/1.4866855

Author

Andreakou, P. ; Poltavtsev, S.V. ; Leonard, J.R. ; Calman, E.V. ; Remeika, M. ; Kuznetsova, Y.Y. ; Butov, L.V. ; Wilkes, J. ; Hanson, M. ; Gossard, A.C. / Optically controlled excitonic transistor. в: Applied Physics Letters. 2014 ; Том 104, № 9. стр. 091101_1-4.

BibTeX

@article{da7dd62602ff48ffa4fe6b1371bdbca0,
title = "Optically controlled excitonic transistor",
abstract = "Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all- optical excitonic routers.",
keywords = "Indirect Excitons, coupled quantum wells",
author = "P. Andreakou and S.V. Poltavtsev and J.R. Leonard and E.V. Calman and M. Remeika and Y.Y. Kuznetsova and L.V. Butov and J. Wilkes and M. Hanson and A.C. Gossard",
year = "2014",
doi = "10.1063/1.4866855",
language = "English",
volume = "104",
pages = "091101_1--4",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "9",

}

RIS

TY - JOUR

T1 - Optically controlled excitonic transistor

AU - Andreakou, P.

AU - Poltavtsev, S.V.

AU - Leonard, J.R.

AU - Calman, E.V.

AU - Remeika, M.

AU - Kuznetsova, Y.Y.

AU - Butov, L.V.

AU - Wilkes, J.

AU - Hanson, M.

AU - Gossard, A.C.

PY - 2014

Y1 - 2014

N2 - Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all- optical excitonic routers.

AB - Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all- optical excitonic routers.

KW - Indirect Excitons

KW - coupled quantum wells

U2 - 10.1063/1.4866855

DO - 10.1063/1.4866855

M3 - Article

VL - 104

SP - 091101_1-4

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -

ID: 6999579