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Optically controlled excitonic transistor. / Andreakou, P.; Poltavtsev, S.V.; Leonard, J.R.; Calman, E.V.; Remeika, M.; Kuznetsova, Y.Y.; Butov, L.V.; Wilkes, J.; Hanson, M.; Gossard, A.C.
In:
Applied Physics Letters, Vol. 104, No. 9, 2014, p. 091101_1-4.
Research output: Contribution to journal › Article
Harvard
Andreakou, P
, Poltavtsev, SV, Leonard, JR, Calman, EV, Remeika, M, Kuznetsova, YY, Butov, LV, Wilkes, J, Hanson, M & Gossard, AC 2014, '
Optically controlled excitonic transistor',
Applied Physics Letters, vol. 104, no. 9, pp. 091101_1-4.
https://doi.org/10.1063/1.4866855APA
Andreakou, P.
, Poltavtsev, S. V., Leonard, J. R., Calman, E. V., Remeika, M., Kuznetsova, Y. Y., Butov, L. V., Wilkes, J., Hanson, M., & Gossard, A. C. (2014).
Optically controlled excitonic transistor.
Applied Physics Letters,
104(9), 091101_1-4.
https://doi.org/10.1063/1.4866855Vancouver
Author
Andreakou, P.
; Poltavtsev, S.V. ; Leonard, J.R. ; Calman, E.V. ; Remeika, M. ; Kuznetsova, Y.Y. ; Butov, L.V. ; Wilkes, J. ; Hanson, M. ; Gossard, A.C. /
Optically controlled excitonic transistor. In:
Applied Physics Letters. 2014 ; Vol. 104, No. 9. pp. 091101_1-4.
BibTeX
@article{da7dd62602ff48ffa4fe6b1371bdbca0,
title = "Optically controlled excitonic transistor",
abstract = "Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all- optical excitonic routers.",
keywords = "Indirect Excitons, coupled quantum wells",
author = "P. Andreakou and S.V. Poltavtsev and J.R. Leonard and E.V. Calman and M. Remeika and Y.Y. Kuznetsova and L.V. Butov and J. Wilkes and M. Hanson and A.C. Gossard",
year = "2014",
doi = "10.1063/1.4866855",
language = "English",
volume = "104",
pages = "091101_1--4",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "9",
}
RIS
TY - JOUR
T1 - Optically controlled excitonic transistor
AU - Andreakou, P.
AU - Poltavtsev, S.V.
AU - Leonard, J.R.
AU - Calman, E.V.
AU - Remeika, M.
AU - Kuznetsova, Y.Y.
AU - Butov, L.V.
AU - Wilkes, J.
AU - Hanson, M.
AU - Gossard, A.C.
PY - 2014
Y1 - 2014
N2 - Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all- optical excitonic routers.
AB - Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all- optical excitonic routers.
KW - Indirect Excitons
KW - coupled quantum wells
U2 - 10.1063/1.4866855
DO - 10.1063/1.4866855
M3 - Article
VL - 104
SP - 091101_1-4
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
ER -
