DOI

The optically active energy states of the exciton in GaAs/Al0.3Ga0.7As quantum wells of various widths are calculated by the direct solution of the three-dimensional Schrodinger equation. A dependence of energies on the quantum well width as a parameter is obtained for widths up to 200 nm. The results are compared with the model of quantization of the exciton as a whole in wide quantum wells. The radiative decay rates for several lowest exciton states are also found.

Язык оригиналаанглийский
Номер статьи012018
ЖурналJournal of Physics: Conference Series
Том1482
Номер выпуска1
DOI
СостояниеОпубликовано - 25 мар 2020
Событие21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 - St. Petersburg, Российская Федерация
Продолжительность: 25 ноя 201929 ноя 2019

    Предметные области Scopus

  • Физика и астрономия (все)

ID: 53430258