The optically active energy states of the exciton in GaAs/Al0.3Ga0.7As quantum wells of various widths are calculated by the direct solution of the three-dimensional Schrodinger equation. A dependence of energies on the quantum well width as a parameter is obtained for widths up to 200 nm. The results are compared with the model of quantization of the exciton as a whole in wide quantum wells. The radiative decay rates for several lowest exciton states are also found.

Original languageEnglish
Article number012018
JournalJournal of Physics: Conference Series
Volume1482
Issue number1
DOIs
StatePublished - 25 Mar 2020
Event21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 - St. Petersburg, Russian Federation
Duration: 25 Nov 201929 Nov 2019

    Scopus subject areas

  • Physics and Astronomy(all)

ID: 53430258