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Optical spin polarization of holes in negatively charged InAs/GaAs self-assembled quantum dots. / Kalevich, V. K.; Ikezawa, M.; Okuno, T.; Kavokin, K. V.; Shiryaev, A. Yu; Brunkov, P. N.; Zhukov, A. E.; Ustinov, V. M.; Masumoto, Y.

в: Physica E: Low-Dimensional Systems and Nanostructures, Том 21, № 2-4, 01.03.2004, стр. 1018-1021.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Kalevich, VK, Ikezawa, M, Okuno, T, Kavokin, KV, Shiryaev, AY, Brunkov, PN, Zhukov, AE, Ustinov, VM & Masumoto, Y 2004, 'Optical spin polarization of holes in negatively charged InAs/GaAs self-assembled quantum dots', Physica E: Low-Dimensional Systems and Nanostructures, Том. 21, № 2-4, стр. 1018-1021. https://doi.org/10.1016/j.physe.2003.11.162

APA

Kalevich, V. K., Ikezawa, M., Okuno, T., Kavokin, K. V., Shiryaev, A. Y., Brunkov, P. N., Zhukov, A. E., Ustinov, V. M., & Masumoto, Y. (2004). Optical spin polarization of holes in negatively charged InAs/GaAs self-assembled quantum dots. Physica E: Low-Dimensional Systems and Nanostructures, 21(2-4), 1018-1021. https://doi.org/10.1016/j.physe.2003.11.162

Vancouver

Kalevich VK, Ikezawa M, Okuno T, Kavokin KV, Shiryaev AY, Brunkov PN и пр. Optical spin polarization of holes in negatively charged InAs/GaAs self-assembled quantum dots. Physica E: Low-Dimensional Systems and Nanostructures. 2004 Март 1;21(2-4):1018-1021. https://doi.org/10.1016/j.physe.2003.11.162

Author

Kalevich, V. K. ; Ikezawa, M. ; Okuno, T. ; Kavokin, K. V. ; Shiryaev, A. Yu ; Brunkov, P. N. ; Zhukov, A. E. ; Ustinov, V. M. ; Masumoto, Y. / Optical spin polarization of holes in negatively charged InAs/GaAs self-assembled quantum dots. в: Physica E: Low-Dimensional Systems and Nanostructures. 2004 ; Том 21, № 2-4. стр. 1018-1021.

BibTeX

@article{2faeafa7559646bdace71f99c486a4c5,
title = "Optical spin polarization of holes in negatively charged InAs/GaAs self-assembled quantum dots",
abstract = "We report an observation of the optical polarization of hole spins in the negatively charged self-assembled InAs/GaAs quantum dots when the dot is occupied by 2 or 5 electrons on average. It was found that the spin relaxation time of holes is comparable with their lifetime. It was demonstrated that the hole spin polarization can be destroyed by both the transverse magnetic field (the Hanle effect) and the electric bias.",
keywords = "Electric bias, Quantum dot, Spin polarization",
author = "Kalevich, {V. K.} and M. Ikezawa and T. Okuno and Kavokin, {K. V.} and Shiryaev, {A. Yu} and Brunkov, {P. N.} and Zhukov, {A. E.} and Ustinov, {V. M.} and Y. Masumoto",
year = "2004",
month = mar,
day = "1",
doi = "10.1016/j.physe.2003.11.162",
language = "English",
volume = "21",
pages = "1018--1021",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "2-4",
note = "Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

}

RIS

TY - JOUR

T1 - Optical spin polarization of holes in negatively charged InAs/GaAs self-assembled quantum dots

AU - Kalevich, V. K.

AU - Ikezawa, M.

AU - Okuno, T.

AU - Kavokin, K. V.

AU - Shiryaev, A. Yu

AU - Brunkov, P. N.

AU - Zhukov, A. E.

AU - Ustinov, V. M.

AU - Masumoto, Y.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - We report an observation of the optical polarization of hole spins in the negatively charged self-assembled InAs/GaAs quantum dots when the dot is occupied by 2 or 5 electrons on average. It was found that the spin relaxation time of holes is comparable with their lifetime. It was demonstrated that the hole spin polarization can be destroyed by both the transverse magnetic field (the Hanle effect) and the electric bias.

AB - We report an observation of the optical polarization of hole spins in the negatively charged self-assembled InAs/GaAs quantum dots when the dot is occupied by 2 or 5 electrons on average. It was found that the spin relaxation time of holes is comparable with their lifetime. It was demonstrated that the hole spin polarization can be destroyed by both the transverse magnetic field (the Hanle effect) and the electric bias.

KW - Electric bias

KW - Quantum dot

KW - Spin polarization

UR - http://www.scopus.com/inward/record.url?scp=1642354704&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2003.11.162

DO - 10.1016/j.physe.2003.11.162

M3 - Conference article

AN - SCOPUS:1642354704

VL - 21

SP - 1018

EP - 1021

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

ID: 39912599