Standard

Onefold coordinated oxygen atom : An electron trap in the silicon oxide. / Gritsenko, V. A.; Shaposhnikov, A. V.; Novikov, Yu N.; Baraban, A. P.; Wong, Hei; Zhidomirov, G. M.; Roger, M.

в: Microelectronics Reliability, Том 43, № 4, 01.04.2003, стр. 665-669.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Gritsenko, VA, Shaposhnikov, AV, Novikov, YN, Baraban, AP, Wong, H, Zhidomirov, GM & Roger, M 2003, 'Onefold coordinated oxygen atom: An electron trap in the silicon oxide', Microelectronics Reliability, Том. 43, № 4, стр. 665-669. https://doi.org/10.1016/S0026-2714(03)00030-1

APA

Gritsenko, V. A., Shaposhnikov, A. V., Novikov, Y. N., Baraban, A. P., Wong, H., Zhidomirov, G. M., & Roger, M. (2003). Onefold coordinated oxygen atom: An electron trap in the silicon oxide. Microelectronics Reliability, 43(4), 665-669. https://doi.org/10.1016/S0026-2714(03)00030-1

Vancouver

Gritsenko VA, Shaposhnikov AV, Novikov YN, Baraban AP, Wong H, Zhidomirov GM и пр. Onefold coordinated oxygen atom: An electron trap in the silicon oxide. Microelectronics Reliability. 2003 Апр. 1;43(4):665-669. https://doi.org/10.1016/S0026-2714(03)00030-1

Author

Gritsenko, V. A. ; Shaposhnikov, A. V. ; Novikov, Yu N. ; Baraban, A. P. ; Wong, Hei ; Zhidomirov, G. M. ; Roger, M. / Onefold coordinated oxygen atom : An electron trap in the silicon oxide. в: Microelectronics Reliability. 2003 ; Том 43, № 4. стр. 665-669.

BibTeX

@article{32df7af28b994f5794bc8dea119c9b20,
title = "Onefold coordinated oxygen atom: An electron trap in the silicon oxide",
abstract = "It has been long suggested that the ≡SiOH defect is an electron or {"}water{"} trap in silicon dioxide based on some indirect evidences. In this work, quantum calculation on the capturing properties of non-bridging oxygen hole center with unpaired electron ≡SiO· and hydrogen defect ≡SiOH in silicon oxide are performed with the ab initio density-functional method. It was found that the ≡SiO· defect is an electron trap and this defect should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. We found that the ≡SiOH defect could not be an electron trap according to the present calculation results.",
author = "Gritsenko, {V. A.} and Shaposhnikov, {A. V.} and Novikov, {Yu N.} and Baraban, {A. P.} and Hei Wong and Zhidomirov, {G. M.} and M. Roger",
year = "2003",
month = apr,
day = "1",
doi = "10.1016/S0026-2714(03)00030-1",
language = "English",
volume = "43",
pages = "665--669",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier",
number = "4",

}

RIS

TY - JOUR

T1 - Onefold coordinated oxygen atom

T2 - An electron trap in the silicon oxide

AU - Gritsenko, V. A.

AU - Shaposhnikov, A. V.

AU - Novikov, Yu N.

AU - Baraban, A. P.

AU - Wong, Hei

AU - Zhidomirov, G. M.

AU - Roger, M.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - It has been long suggested that the ≡SiOH defect is an electron or "water" trap in silicon dioxide based on some indirect evidences. In this work, quantum calculation on the capturing properties of non-bridging oxygen hole center with unpaired electron ≡SiO· and hydrogen defect ≡SiOH in silicon oxide are performed with the ab initio density-functional method. It was found that the ≡SiO· defect is an electron trap and this defect should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. We found that the ≡SiOH defect could not be an electron trap according to the present calculation results.

AB - It has been long suggested that the ≡SiOH defect is an electron or "water" trap in silicon dioxide based on some indirect evidences. In this work, quantum calculation on the capturing properties of non-bridging oxygen hole center with unpaired electron ≡SiO· and hydrogen defect ≡SiOH in silicon oxide are performed with the ab initio density-functional method. It was found that the ≡SiO· defect is an electron trap and this defect should be the responsible candidate for better hardness against radiation for the metal-oxide-semiconductor gate oxide produced by wet oxidation. We found that the ≡SiOH defect could not be an electron trap according to the present calculation results.

UR - http://www.scopus.com/inward/record.url?scp=0037381456&partnerID=8YFLogxK

U2 - 10.1016/S0026-2714(03)00030-1

DO - 10.1016/S0026-2714(03)00030-1

M3 - Article

AN - SCOPUS:0037381456

VL - 43

SP - 665

EP - 669

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 4

ER -

ID: 41085838