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On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon. / Seredin, P. V.; Radam, Ali Obaid; Goloshchapov, D. L.; Len’shin, A. S.; Buylov, N. S.; Barkov, K. A.; Nesterov, D. N.; Mizerov, A. M.; Timoshnev, S. N.; Nikitina, E. V.; Arsentyev, I. N.; Sharafidinov, Sh; Kukushkin, S. A.; Kasatkin, I. A.
в:
Semiconductors, Том 56, № 4, 29.06.2022, стр. 253-258.
Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Harvard
Seredin, PV, Radam, AO, Goloshchapov, DL, Len’shin, AS, Buylov, NS, Barkov, KA, Nesterov, DN, Mizerov, AM, Timoshnev, SN, Nikitina, EV, Arsentyev, IN, Sharafidinov, S
, Kukushkin, SA & Kasatkin, IA 2022, '
On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon',
Semiconductors, Том. 56, № 4, стр. 253-258.
https://doi.org/10.1134/s1063782622040030APA
Seredin, P. V., Radam, A. O., Goloshchapov, D. L., Len’shin, A. S., Buylov, N. S., Barkov, K. A., Nesterov, D. N., Mizerov, A. M., Timoshnev, S. N., Nikitina, E. V., Arsentyev, I. N., Sharafidinov, S.
, Kukushkin, S. A., & Kasatkin, I. A. (2022).
On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon.
Semiconductors,
56(4), 253-258.
https://doi.org/10.1134/s1063782622040030Vancouver
Author
Seredin, P. V. ; Radam, Ali Obaid ; Goloshchapov, D. L. ; Len’shin, A. S. ; Buylov, N. S. ; Barkov, K. A. ; Nesterov, D. N. ; Mizerov, A. M. ; Timoshnev, S. N. ; Nikitina, E. V. ; Arsentyev, I. N. ; Sharafidinov, Sh
; Kukushkin, S. A. ; Kasatkin, I. A. /
On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon. в:
Semiconductors. 2022 ; Том 56, № 4. стр. 253-258.
BibTeX
@article{e84b30cdc5994de4b5096ffc848e91df,
title = "On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon",
abstract = "Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid substrate containing layers of silicon carbide and porous silicon. Using X-ray diffractometry, Raman and photoluminescence spectroscopy, it is shown that thin films formed on a hybrid substrate have minimal residual stresses and intense photoluminescence.",
keywords = "AlGaN, GaN, MBE, porSi",
author = "Seredin, {P. V.} and Radam, {Ali Obaid} and Goloshchapov, {D. L.} and Len{\textquoteright}shin, {A. S.} and Buylov, {N. S.} and Barkov, {K. A.} and Nesterov, {D. N.} and Mizerov, {A. M.} and Timoshnev, {S. N.} and Nikitina, {E. V.} and Arsentyev, {I. N.} and Sh Sharafidinov and Kukushkin, {S. A.} and Kasatkin, {I. A.}",
note = "Publisher Copyright: {\textcopyright} 2022, Pleiades Publishing, Ltd.",
year = "2022",
month = jun,
day = "29",
doi = "10.1134/s1063782622040030",
language = "English",
volume = "56",
pages = "253--258",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "4",
}
RIS
TY - JOUR
T1 - On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon
AU - Seredin, P. V.
AU - Radam, Ali Obaid
AU - Goloshchapov, D. L.
AU - Len’shin, A. S.
AU - Buylov, N. S.
AU - Barkov, K. A.
AU - Nesterov, D. N.
AU - Mizerov, A. M.
AU - Timoshnev, S. N.
AU - Nikitina, E. V.
AU - Arsentyev, I. N.
AU - Sharafidinov, Sh
AU - Kukushkin, S. A.
AU - Kasatkin, I. A.
N1 - Publisher Copyright:
© 2022, Pleiades Publishing, Ltd.
PY - 2022/6/29
Y1 - 2022/6/29
N2 - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid substrate containing layers of silicon carbide and porous silicon. Using X-ray diffractometry, Raman and photoluminescence spectroscopy, it is shown that thin films formed on a hybrid substrate have minimal residual stresses and intense photoluminescence.
AB - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid substrate containing layers of silicon carbide and porous silicon. Using X-ray diffractometry, Raman and photoluminescence spectroscopy, it is shown that thin films formed on a hybrid substrate have minimal residual stresses and intense photoluminescence.
KW - AlGaN
KW - GaN
KW - MBE
KW - porSi
UR - http://www.scopus.com/inward/record.url?scp=85133170188&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/62737427-04e0-399b-aa84-4e157e662c70/
U2 - 10.1134/s1063782622040030
DO - 10.1134/s1063782622040030
M3 - Article
AN - SCOPUS:85133170188
VL - 56
SP - 253
EP - 258
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 4
ER -
