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Numerical simulation of surface morphology of two-tier microsized matrix structure of SiC FEA. / Никифоров, Константин Аркадьевич; Сайфуллин, Марат Фанилович; Чумак, Максим.

33rd International Vacuum Nanoelectronics Conference, IVNC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9203144.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Никифоров, КА, Сайфуллин, МФ & Чумак, М 2020, Numerical simulation of surface morphology of two-tier microsized matrix structure of SiC FEA. в 33rd International Vacuum Nanoelectronics Conference, IVNC 2020., 9203144, Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/IVNC49440.2020.9203144

APA

Никифоров, К. А., Сайфуллин, М. Ф., & Чумак, М. (2020). Numerical simulation of surface morphology of two-tier microsized matrix structure of SiC FEA. в 33rd International Vacuum Nanoelectronics Conference, IVNC 2020 [9203144] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC49440.2020.9203144

Vancouver

Никифоров КА, Сайфуллин МФ, Чумак М. Numerical simulation of surface morphology of two-tier microsized matrix structure of SiC FEA. в 33rd International Vacuum Nanoelectronics Conference, IVNC 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 9203144 https://doi.org/10.1109/IVNC49440.2020.9203144

Author

Никифоров, Константин Аркадьевич ; Сайфуллин, Марат Фанилович ; Чумак, Максим. / Numerical simulation of surface morphology of two-tier microsized matrix structure of SiC FEA. 33rd International Vacuum Nanoelectronics Conference, IVNC 2020. Institute of Electrical and Electronics Engineers Inc., 2020.

BibTeX

@inproceedings{f4e93dd36d4249e5baf7f9a202fb492d,
title = "Numerical simulation of surface morphology of two-tier microsized matrix structure of SiC FEA",
abstract = "Numerical simulation is based on AFM data of surface morphology of silicon carbide field emission array (FEA) with two-tier microstructure made by SPETU LETI technology. Using COMSOL Multiphysics, the procedure for import AFM data into simulation environment is developed and the corresponding mathematical model of emission surface is constructed. Numerical model is investigated for computational mesh convergence using the calculation of electric field strength distribution by the finite element method. The optimal size of finite elements is revealed, at which the best convergence of the numerical solution is achieved, and AFM data interpolation parameters are investigated.",
keywords = "AFM, Atomic force microscopy, FEA, Field emission array, Finite element method, Mathematical modelling, Mesh convergence, Numerical simulation, Silicon carbide, Surface morphology",
author = "Никифоров, {Константин Аркадьевич} and Сайфуллин, {Марат Фанилович} and Максим Чумак",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.",
year = "2020",
month = jul,
doi = "10.1109/IVNC49440.2020.9203144",
language = "English",
booktitle = "33rd International Vacuum Nanoelectronics Conference, IVNC 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

RIS

TY - GEN

T1 - Numerical simulation of surface morphology of two-tier microsized matrix structure of SiC FEA

AU - Никифоров, Константин Аркадьевич

AU - Сайфуллин, Марат Фанилович

AU - Чумак, Максим

N1 - Publisher Copyright: © 2020 IEEE.

PY - 2020/7

Y1 - 2020/7

N2 - Numerical simulation is based on AFM data of surface morphology of silicon carbide field emission array (FEA) with two-tier microstructure made by SPETU LETI technology. Using COMSOL Multiphysics, the procedure for import AFM data into simulation environment is developed and the corresponding mathematical model of emission surface is constructed. Numerical model is investigated for computational mesh convergence using the calculation of electric field strength distribution by the finite element method. The optimal size of finite elements is revealed, at which the best convergence of the numerical solution is achieved, and AFM data interpolation parameters are investigated.

AB - Numerical simulation is based on AFM data of surface morphology of silicon carbide field emission array (FEA) with two-tier microstructure made by SPETU LETI technology. Using COMSOL Multiphysics, the procedure for import AFM data into simulation environment is developed and the corresponding mathematical model of emission surface is constructed. Numerical model is investigated for computational mesh convergence using the calculation of electric field strength distribution by the finite element method. The optimal size of finite elements is revealed, at which the best convergence of the numerical solution is achieved, and AFM data interpolation parameters are investigated.

KW - AFM

KW - Atomic force microscopy

KW - FEA

KW - Field emission array

KW - Finite element method

KW - Mathematical modelling

KW - Mesh convergence

KW - Numerical simulation

KW - Silicon carbide

KW - Surface morphology

UR - http://www.scopus.com/inward/record.url?scp=85092724136&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/e7f5981b-e9ea-39d5-8033-f9a63b88c8be/

U2 - 10.1109/IVNC49440.2020.9203144

DO - 10.1109/IVNC49440.2020.9203144

M3 - Conference contribution

BT - 33rd International Vacuum Nanoelectronics Conference, IVNC 2020

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

ID: 69856733