Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная
Non-gated field emission array as low-energy electron source: experiment and simulation. / Nikiforov, K.A.; Antonova, L.I.; Egorov, N.V.; Trofimov, V.V.; Makeev, V.V.; Ogurtsov, O.F.
Proceedings of RUPAC 2012. 2012. стр. 218-220.Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная
}
TY - GEN
T1 - Non-gated field emission array as low-energy electron source: experiment and simulation
AU - Nikiforov, K.A.
AU - Antonova, L.I.
AU - Egorov, N.V.
AU - Trofimov, V.V.
AU - Makeev, V.V.
AU - Ogurtsov, O.F.
PY - 2012
Y1 - 2012
N2 - A non-gated NbN on Si wafer field emission arrays are studied. The I-V measurements and emission characteristics of edge-shaped cathodes in atmosphere low-voltage regime are considered. Mathematical and computer models are presented. The current density obtained from experiment was up to 384 Ampere per square centimeter in emission area 9 sq.mm. Low-voltage regime (20 V) for near (~ 1mkm) interelectrode distance in diode configuration is discussed.
AB - A non-gated NbN on Si wafer field emission arrays are studied. The I-V measurements and emission characteristics of edge-shaped cathodes in atmosphere low-voltage regime are considered. Mathematical and computer models are presented. The current density obtained from experiment was up to 384 Ampere per square centimeter in emission area 9 sq.mm. Low-voltage regime (20 V) for near (~ 1mkm) interelectrode distance in diode configuration is discussed.
M3 - Conference contribution
SN - 978-3-95450-125-0218
SP - 218
EP - 220
BT - Proceedings of RUPAC 2012
ER -
ID: 4612533