Standard
Harvard
Nikiforov, KA, Antonova, LI
, Egorov, NV, Trofimov, VV, Makeev, VV & Ogurtsov, OF 2012,
Non-gated field emission array as low-energy electron source: experiment and simulation. in
Proceedings of RUPAC 2012. pp. 218-220. <
http://www.scopus.com/results/results.url?sort=plf-f&src=s&st1=Non-gated+field+emission+array+as+low-energy+electron+source%3a+experiment+and+simulation&sid=FD7C6BA0FD1C708C9954D6C83D60902C.aqHV0EoE4xlIF3hgVWgA%3a110&sot=b&sdt=b&sl=102&s=TITLE-ABS-KEY%28Non-gated+field+emission+array+as+low-energy+electron+source%3a+experiment+and+simulation%29&origin=searchbasic&txGid=FD7C6BA0FD1C708C9954D6C83D60902C.aqHV0EoE4xlIF3hgVWgA%3a11>
APA
Nikiforov, K. A., Antonova, L. I.
, Egorov, N. V., Trofimov, V. V., Makeev, V. V., & Ogurtsov, O. F. (2012).
Non-gated field emission array as low-energy electron source: experiment and simulation. In
Proceedings of RUPAC 2012 (pp. 218-220)
http://www.scopus.com/results/results.url?sort=plf-f&src=s&st1=Non-gated+field+emission+array+as+low-energy+electron+source%3a+experiment+and+simulation&sid=FD7C6BA0FD1C708C9954D6C83D60902C.aqHV0EoE4xlIF3hgVWgA%3a110&sot=b&sdt=b&sl=102&s=TITLE-ABS-KEY%28Non-gated+field+emission+array+as+low-energy+electron+source%3a+experiment+and+simulation%29&origin=searchbasic&txGid=FD7C6BA0FD1C708C9954D6C83D60902C.aqHV0EoE4xlIF3hgVWgA%3a11
Vancouver
Author
BibTeX
@inproceedings{9d4b072aa59540fab9a27779e97ea959,
title = "Non-gated field emission array as low-energy electron source: experiment and simulation",
abstract = "A non-gated NbN on Si wafer field emission arrays are studied. The I-V measurements and emission characteristics of edge-shaped cathodes in atmosphere low-voltage regime are considered. Mathematical and computer models are presented. The current density obtained from experiment was up to 384 Ampere per square centimeter in emission area 9 sq.mm. Low-voltage regime (20 V) for near (~ 1mkm) interelectrode distance in diode configuration is discussed.",
author = "K.A. Nikiforov and L.I. Antonova and N.V. Egorov and V.V. Trofimov and V.V. Makeev and O.F. Ogurtsov",
year = "2012",
language = "English",
isbn = "978-3-95450-125-0218",
pages = "218--220",
booktitle = "Proceedings of RUPAC 2012",
}
RIS
TY - GEN
T1 - Non-gated field emission array as low-energy electron source: experiment and simulation
AU - Nikiforov, K.A.
AU - Antonova, L.I.
AU - Egorov, N.V.
AU - Trofimov, V.V.
AU - Makeev, V.V.
AU - Ogurtsov, O.F.
PY - 2012
Y1 - 2012
N2 - A non-gated NbN on Si wafer field emission arrays are studied. The I-V measurements and emission characteristics of edge-shaped cathodes in atmosphere low-voltage regime are considered. Mathematical and computer models are presented. The current density obtained from experiment was up to 384 Ampere per square centimeter in emission area 9 sq.mm. Low-voltage regime (20 V) for near (~ 1mkm) interelectrode distance in diode configuration is discussed.
AB - A non-gated NbN on Si wafer field emission arrays are studied. The I-V measurements and emission characteristics of edge-shaped cathodes in atmosphere low-voltage regime are considered. Mathematical and computer models are presented. The current density obtained from experiment was up to 384 Ampere per square centimeter in emission area 9 sq.mm. Low-voltage regime (20 V) for near (~ 1mkm) interelectrode distance in diode configuration is discussed.
M3 - Conference contribution
SN - 978-3-95450-125-0218
SP - 218
EP - 220
BT - Proceedings of RUPAC 2012
ER -
