Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping. / Sokolova, Anastasiia V.; Skurlov, Ivan D.; Babaev, Anton A.; Perfenov, Peter S.; Miropoltsev, Maksim A.; Danilov, Denis V.; Baranov, Mikhail A.; Kolesnikov, Ilya E.; Koroleva, Aleksandra V.; Zhizhin, Evgeniy V.; Litvin, Aleksandr P.; Fedorov, Anatoly V.; Cherevkov, Sergei A.
в: Nanomaterials, Том 12, № 23, 4198, 01.12.2022.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping
AU - Sokolova, Anastasiia V.
AU - Skurlov, Ivan D.
AU - Babaev, Anton A.
AU - Perfenov, Peter S.
AU - Miropoltsev, Maksim A.
AU - Danilov, Denis V.
AU - Baranov, Mikhail A.
AU - Kolesnikov, Ilya E.
AU - Koroleva, Aleksandra V.
AU - Zhizhin, Evgeniy V.
AU - Litvin, Aleksandr P.
AU - Fedorov, Anatoly V.
AU - Cherevkov, Sergei A.
PY - 2022/12/1
Y1 - 2022/12/1
N2 - Doping the semiconductor nanocrystals is one of the most effective ways to obtain unique materials suitable for high-performance next-generation optoelectronic devices. In this study, we demonstrate a novel nanomaterial for the near-infrared spectral region. To do this, we developed a partial cation exchange reaction on the HgTe nanoplatelets, substituting Hg cations with Pb cations. Under the optimized reaction conditions and Pb precursor ratio, a photoluminescence band shifts to ~1100 nm with a quantum yield of 22%. Based on steady-state and transient optical spectroscopies, we suggest a model of photoexcitation relaxation in the HgTe:Pb nanoplatelets. We also demonstrate that the thin films of doped nanoplatelets possess superior electric properties compared to their pristine counterparts. These findings show that Pb-doped HgTe nanoplatelets are new perspective material for application in both light-emitting and light-detection devices operating in the near-infrared spectral region.
AB - Doping the semiconductor nanocrystals is one of the most effective ways to obtain unique materials suitable for high-performance next-generation optoelectronic devices. In this study, we demonstrate a novel nanomaterial for the near-infrared spectral region. To do this, we developed a partial cation exchange reaction on the HgTe nanoplatelets, substituting Hg cations with Pb cations. Under the optimized reaction conditions and Pb precursor ratio, a photoluminescence band shifts to ~1100 nm with a quantum yield of 22%. Based on steady-state and transient optical spectroscopies, we suggest a model of photoexcitation relaxation in the HgTe:Pb nanoplatelets. We also demonstrate that the thin films of doped nanoplatelets possess superior electric properties compared to their pristine counterparts. These findings show that Pb-doped HgTe nanoplatelets are new perspective material for application in both light-emitting and light-detection devices operating in the near-infrared spectral region.
KW - cation exchange
KW - nanoplatelets
KW - near-infrared emission
KW - photosensitivity
UR - https://www.mendeley.com/catalogue/26e5f5dc-df5b-3677-b6fc-d774012d708c/
U2 - 10.3390/nano12234198
DO - 10.3390/nano12234198
M3 - статья
VL - 12
JO - Nanomaterials
JF - Nanomaterials
SN - 2079-4991
IS - 23
M1 - 4198
ER -
ID: 105695735