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Modeling the Shape Evolution of Selective Area Grown Zn3P2Nanoislands. / Dubrovskii, Vladimir G.; Steinvall, Simon Escobar; De Mestral, Virginie; Paul, Rajrupa; Leran, Jean Baptiste; Zamani, Mahdi; Stutz, Elias Z.; Fontcuberta I Morral, Anna.

в: Crystal Growth and Design, Том 21, № 8, 04.08.2021, стр. 4732-4737.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Dubrovskii, VG, Steinvall, SE, De Mestral, V, Paul, R, Leran, JB, Zamani, M, Stutz, EZ & Fontcuberta I Morral, A 2021, 'Modeling the Shape Evolution of Selective Area Grown Zn3P2Nanoislands', Crystal Growth and Design, Том. 21, № 8, стр. 4732-4737. https://doi.org/10.1021/acs.cgd.1c00569

APA

Dubrovskii, V. G., Steinvall, S. E., De Mestral, V., Paul, R., Leran, J. B., Zamani, M., Stutz, E. Z., & Fontcuberta I Morral, A. (2021). Modeling the Shape Evolution of Selective Area Grown Zn3P2Nanoislands. Crystal Growth and Design, 21(8), 4732-4737. https://doi.org/10.1021/acs.cgd.1c00569

Vancouver

Dubrovskii VG, Steinvall SE, De Mestral V, Paul R, Leran JB, Zamani M и пр. Modeling the Shape Evolution of Selective Area Grown Zn3P2Nanoislands. Crystal Growth and Design. 2021 Авг. 4;21(8):4732-4737. https://doi.org/10.1021/acs.cgd.1c00569

Author

Dubrovskii, Vladimir G. ; Steinvall, Simon Escobar ; De Mestral, Virginie ; Paul, Rajrupa ; Leran, Jean Baptiste ; Zamani, Mahdi ; Stutz, Elias Z. ; Fontcuberta I Morral, Anna. / Modeling the Shape Evolution of Selective Area Grown Zn3P2Nanoislands. в: Crystal Growth and Design. 2021 ; Том 21, № 8. стр. 4732-4737.

BibTeX

@article{ae2685b1a71848e1834d2a34afdae60b,
title = "Modeling the Shape Evolution of Selective Area Grown Zn3P2Nanoislands",
abstract = "Selective area growth of zinc phosphide (Zn3P2) on InP provides a pathway to high-quality semiconductor nanostructures and textured thin films made of earth-abundant elements. In the precoalescence stage, Zn3P2 emerges in the form of nanoislands undergoing a peculiar shape transformation in the course of growth. We present a model based on the minimization of the surface energy with respect to the relevant geometrical parameters which quantitively describes the shape of nanoislands depending on their volume. The results are presented in the dimensionless variables which allow us to comprehend simultaneously the islands grown in differently sized pinholes and for different growth times. The shape transformation is driven by a competition of (112) and (101) side facets and (001) top facet. The islands are flat and regular octagonal at the beginning of growth, transitioning to the full nanopyramid restricted solely by (101) facets at the end.",
author = "Dubrovskii, {Vladimir G.} and Steinvall, {Simon Escobar} and {De Mestral}, Virginie and Rajrupa Paul and Leran, {Jean Baptiste} and Mahdi Zamani and Stutz, {Elias Z.} and {Fontcuberta I Morral}, Anna",
note = "Publisher Copyright: {\textcopyright}",
year = "2021",
month = aug,
day = "4",
doi = "10.1021/acs.cgd.1c00569",
language = "English",
volume = "21",
pages = "4732--4737",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "8",

}

RIS

TY - JOUR

T1 - Modeling the Shape Evolution of Selective Area Grown Zn3P2Nanoislands

AU - Dubrovskii, Vladimir G.

AU - Steinvall, Simon Escobar

AU - De Mestral, Virginie

AU - Paul, Rajrupa

AU - Leran, Jean Baptiste

AU - Zamani, Mahdi

AU - Stutz, Elias Z.

AU - Fontcuberta I Morral, Anna

N1 - Publisher Copyright: ©

PY - 2021/8/4

Y1 - 2021/8/4

N2 - Selective area growth of zinc phosphide (Zn3P2) on InP provides a pathway to high-quality semiconductor nanostructures and textured thin films made of earth-abundant elements. In the precoalescence stage, Zn3P2 emerges in the form of nanoislands undergoing a peculiar shape transformation in the course of growth. We present a model based on the minimization of the surface energy with respect to the relevant geometrical parameters which quantitively describes the shape of nanoislands depending on their volume. The results are presented in the dimensionless variables which allow us to comprehend simultaneously the islands grown in differently sized pinholes and for different growth times. The shape transformation is driven by a competition of (112) and (101) side facets and (001) top facet. The islands are flat and regular octagonal at the beginning of growth, transitioning to the full nanopyramid restricted solely by (101) facets at the end.

AB - Selective area growth of zinc phosphide (Zn3P2) on InP provides a pathway to high-quality semiconductor nanostructures and textured thin films made of earth-abundant elements. In the precoalescence stage, Zn3P2 emerges in the form of nanoislands undergoing a peculiar shape transformation in the course of growth. We present a model based on the minimization of the surface energy with respect to the relevant geometrical parameters which quantitively describes the shape of nanoislands depending on their volume. The results are presented in the dimensionless variables which allow us to comprehend simultaneously the islands grown in differently sized pinholes and for different growth times. The shape transformation is driven by a competition of (112) and (101) side facets and (001) top facet. The islands are flat and regular octagonal at the beginning of growth, transitioning to the full nanopyramid restricted solely by (101) facets at the end.

UR - http://www.scopus.com/inward/record.url?scp=85111519248&partnerID=8YFLogxK

U2 - 10.1021/acs.cgd.1c00569

DO - 10.1021/acs.cgd.1c00569

M3 - Article

AN - SCOPUS:85111519248

VL - 21

SP - 4732

EP - 4737

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 8

ER -

ID: 88770134