Standard

Modeling the interfacial profiles in III-V VLS axial nanowire heterostructures based on group V interchange. / Дубровский, Владимир Германович.

2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. стр. 349 (IEEE Xplore Digital Library).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаяРецензирование

Harvard

Дубровский, ВГ 2024, Modeling the interfacial profiles in III-V VLS axial nanowire heterostructures based on group V interchange. в 2024 International Conference Laser Optics, ICLO 2024 - Proceedings. IEEE Xplore Digital Library, стр. 349, 21st International Conference Laser Optics, Санкт-Петербург, Российская Федерация, 1/07/24. https://doi.org/10.1109/ICLO59702.2024.10624565

APA

Дубровский, В. Г. (2024). Modeling the interfacial profiles in III-V VLS axial nanowire heterostructures based on group V interchange. в 2024 International Conference Laser Optics, ICLO 2024 - Proceedings (стр. 349). (IEEE Xplore Digital Library). https://doi.org/10.1109/ICLO59702.2024.10624565

Vancouver

Дубровский ВГ. Modeling the interfacial profiles in III-V VLS axial nanowire heterostructures based on group V interchange. в 2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. стр. 349. (IEEE Xplore Digital Library). https://doi.org/10.1109/ICLO59702.2024.10624565

Author

Дубровский, Владимир Германович. / Modeling the interfacial profiles in III-V VLS axial nanowire heterostructures based on group V interchange. 2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. стр. 349 (IEEE Xplore Digital Library).

BibTeX

@inproceedings{e19dcc1d4cb8461893f5c2651ce91093,
title = "Modeling the interfacial profiles in III-V VLS axial nanowire heterostructures based on group V interchange",
abstract = "abstract-Interfacial abruptness in axial heterostructures within III-V nanowires (NWs) grown by the vapor-liquid-solid (VLS) method is affected by the reservoir effect in catalyst droplets which broadens the heterointerfaces. Here, we present a model which provides explicitly the interfacial profiles in double NW heterostructures based on group V interchange of any composition, and fit the data on Au-catalyzed InP/InAs/InP, self-catalyzed GaAs0.6P0.4/GaxAsxP1-x/GaAs0.6P0.4 and GaP/GaAsxP1-x/GaP axial NW heterostructures.",
keywords = "III-V nanowire heterostructures, group V interchange, modeling",
author = "Дубровский, {Владимир Германович}",
year = "2024",
month = jul,
day = "1",
doi = "10.1109/ICLO59702.2024.10624565",
language = "English",
isbn = "9798350390674",
series = "IEEE Xplore Digital Library",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "349",
booktitle = "2024 International Conference Laser Optics, ICLO 2024 - Proceedings",
note = "21st International Conference Laser Optics, ICLO 2024 ; Conference date: 01-07-2024 Through 05-07-2024",
url = "https://laseroptics.org/, https://laseroptics.org",

}

RIS

TY - GEN

T1 - Modeling the interfacial profiles in III-V VLS axial nanowire heterostructures based on group V interchange

AU - Дубровский, Владимир Германович

N1 - Conference code: 21

PY - 2024/7/1

Y1 - 2024/7/1

N2 - abstract-Interfacial abruptness in axial heterostructures within III-V nanowires (NWs) grown by the vapor-liquid-solid (VLS) method is affected by the reservoir effect in catalyst droplets which broadens the heterointerfaces. Here, we present a model which provides explicitly the interfacial profiles in double NW heterostructures based on group V interchange of any composition, and fit the data on Au-catalyzed InP/InAs/InP, self-catalyzed GaAs0.6P0.4/GaxAsxP1-x/GaAs0.6P0.4 and GaP/GaAsxP1-x/GaP axial NW heterostructures.

AB - abstract-Interfacial abruptness in axial heterostructures within III-V nanowires (NWs) grown by the vapor-liquid-solid (VLS) method is affected by the reservoir effect in catalyst droplets which broadens the heterointerfaces. Here, we present a model which provides explicitly the interfacial profiles in double NW heterostructures based on group V interchange of any composition, and fit the data on Au-catalyzed InP/InAs/InP, self-catalyzed GaAs0.6P0.4/GaxAsxP1-x/GaAs0.6P0.4 and GaP/GaAsxP1-x/GaP axial NW heterostructures.

KW - III-V nanowire heterostructures

KW - group V interchange

KW - modeling

UR - https://ieeexplore.ieee.org/document/10624565

UR - https://www.mendeley.com/catalogue/c81c9136-a936-3d0f-b026-997934d25bf9/

U2 - 10.1109/ICLO59702.2024.10624565

DO - 10.1109/ICLO59702.2024.10624565

M3 - Conference contribution

SN - 9798350390674

T3 - IEEE Xplore Digital Library

SP - 349

BT - 2024 International Conference Laser Optics, ICLO 2024 - Proceedings

T2 - 21st International Conference Laser Optics

Y2 - 1 July 2024 through 5 July 2024

ER -

ID: 124440183