Modeling the dynamics of interface morphology and crystal phase change in self-catalyzed GaAs nanowires

Standard

Modeling the dynamics of interface morphology and crystal phase change in self-catalyzed GaAs nanowires. / Wilson, Debra Paige ; Sokolovskii, A. S. ; LaPierre, Ray R.; Panciera, F.; Glas, F.; Dubrovskii, V. G. .

в: Nanotechnology, Том 31, № 48, 485602, 27.11.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Author

Wilson, Debra Paige ; Sokolovskii, A. S. ; LaPierre, Ray R. ; Panciera, F. ; Glas, F. ; Dubrovskii, V. G. . / Modeling the dynamics of interface morphology and crystal phase change in self-catalyzed GaAs nanowires. в: Nanotechnology. 2020 ; Том 31, № 48.

BibTeX

@article{611be9ecfea842fc8ac7baa946a5ed10,

title = "Modeling the dynamics of interface morphology and crystal phase change in self-catalyzed GaAs nanowires",

abstract = "The droplet contact angle and morphology of the growth interface (vertical, tapered or truncated facets) are known to affect the zincblende (ZB) or wurtzite (WZ) crystal phase of III-V nanowires (NWs) grown by the vapor-liquid-solid method. Here, we present a model which describes the dynamics of the morphological evolution in self-catalyzed III-V NWs in terms of the time-dependent (or length-dependent) contact angle or top nanowire radius under varying material fluxes. The model fits quite well the contact angle dynamics obtained by in situ growth monitoring of self-catalyzed GaAs NWs in a transmission electron microscope. These results can be used for modeling the interface dynamics and the related crystal phase switching and for obtaining ZB-WZ heterostructures in III-V.",

keywords = "contact angle, crystal phase, nanowire radius, self-catalyzed GaAs nanowires, GROWTH",

author = "Wilson, {Debra Paige} and Sokolovskii, {A. S.} and LaPierre, {Ray R.} and F. Panciera and F. Glas and Dubrovskii, {V. G.}",

note = "Publisher Copyright: {\textcopyright} 2020 IOP Publishing Ltd.",

year = "2020",

month = nov,

day = "27",

doi = "10.1088/1361-6528/abb106",

language = "English",

volume = "31",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "48",

}

RIS

TY - JOUR

T1 - Modeling the dynamics of interface morphology and crystal phase change in self-catalyzed GaAs nanowires

AU - Wilson, Debra Paige

AU - Sokolovskii, A. S.

AU - LaPierre, Ray R.

AU - Panciera, F.

AU - Glas, F.

AU - Dubrovskii, V. G.

PY - 2020/11/27

Y1 - 2020/11/27

N2 - The droplet contact angle and morphology of the growth interface (vertical, tapered or truncated facets) are known to affect the zincblende (ZB) or wurtzite (WZ) crystal phase of III-V nanowires (NWs) grown by the vapor-liquid-solid method. Here, we present a model which describes the dynamics of the morphological evolution in self-catalyzed III-V NWs in terms of the time-dependent (or length-dependent) contact angle or top nanowire radius under varying material fluxes. The model fits quite well the contact angle dynamics obtained by in situ growth monitoring of self-catalyzed GaAs NWs in a transmission electron microscope. These results can be used for modeling the interface dynamics and the related crystal phase switching and for obtaining ZB-WZ heterostructures in III-V.

AB - The droplet contact angle and morphology of the growth interface (vertical, tapered or truncated facets) are known to affect the zincblende (ZB) or wurtzite (WZ) crystal phase of III-V nanowires (NWs) grown by the vapor-liquid-solid method. Here, we present a model which describes the dynamics of the morphological evolution in self-catalyzed III-V NWs in terms of the time-dependent (or length-dependent) contact angle or top nanowire radius under varying material fluxes. The model fits quite well the contact angle dynamics obtained by in situ growth monitoring of self-catalyzed GaAs NWs in a transmission electron microscope. These results can be used for modeling the interface dynamics and the related crystal phase switching and for obtaining ZB-WZ heterostructures in III-V.

KW - contact angle

KW - crystal phase

KW - nanowire radius

KW - self-catalyzed GaAs nanowires

KW - GROWTH

UR - http://www.scopus.com/inward/record.url?scp=85091646413&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/efbde220-99e6-36ca-b809-51a1e0e3f9d3/

U2 - 10.1088/1361-6528/abb106

DO - 10.1088/1361-6528/abb106

M3 - Article

VL - 31

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 48

M1 - 485602

ER -

ID: 70924481