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Modeling of semiconductor nanowire selective-area MOCVD growth. / Koriakin, A. A.; Reiter, M.; Sokolova, Zh V.; Sibirev, N. V.

в: Journal of Physics: Conference Series, Том 917, № 3, 032036, 23.11.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Koriakin, AA, Reiter, M, Sokolova, ZV & Sibirev, NV 2017, 'Modeling of semiconductor nanowire selective-area MOCVD growth', Journal of Physics: Conference Series, Том. 917, № 3, 032036. https://doi.org/10.1088/1742-6596/917/3/032036

APA

Koriakin, A. A., Reiter, M., Sokolova, Z. V., & Sibirev, N. V. (2017). Modeling of semiconductor nanowire selective-area MOCVD growth. Journal of Physics: Conference Series, 917(3), [032036]. https://doi.org/10.1088/1742-6596/917/3/032036

Vancouver

Koriakin AA, Reiter M, Sokolova ZV, Sibirev NV. Modeling of semiconductor nanowire selective-area MOCVD growth. Journal of Physics: Conference Series. 2017 Нояб. 23;917(3). 032036. https://doi.org/10.1088/1742-6596/917/3/032036

Author

Koriakin, A. A. ; Reiter, M. ; Sokolova, Zh V. ; Sibirev, N. V. / Modeling of semiconductor nanowire selective-area MOCVD growth. в: Journal of Physics: Conference Series. 2017 ; Том 917, № 3.

BibTeX

@article{56aa064dcb514778b35b6fd05daa7b9b,
title = "Modeling of semiconductor nanowire selective-area MOCVD growth",
abstract = "A numerical approach to the determination of gas kinetics in the case of non-planar nanostructure growth via the selective-area metal-organic chemical vapor deposition is developed. The direct simulation Monte-Carlo method is utilized to model the rarefied gas flow of precursor particles nearby the substrate. The computation is performed for the GaAs nanowire growth via the selective-area metal-organic chemical vapor deposition. The model allows the quantitative description of the decrease of nanowire length with the increase of distance between nanowires (the so-called synergetic effect). The optimal pitch of the mask that corresponds to the maximal nanowire length is found for typical growth conditions. In particular, our calculation shows that the optimal pitch increases with the increase of the nanowire diameter.",
author = "Koriakin, {A. A.} and M. Reiter and Sokolova, {Zh V.} and Sibirev, {N. V.}",
year = "2017",
month = nov,
day = "23",
doi = "10.1088/1742-6596/917/3/032036",
language = "English",
volume = "917",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "3",

}

RIS

TY - JOUR

T1 - Modeling of semiconductor nanowire selective-area MOCVD growth

AU - Koriakin, A. A.

AU - Reiter, M.

AU - Sokolova, Zh V.

AU - Sibirev, N. V.

PY - 2017/11/23

Y1 - 2017/11/23

N2 - A numerical approach to the determination of gas kinetics in the case of non-planar nanostructure growth via the selective-area metal-organic chemical vapor deposition is developed. The direct simulation Monte-Carlo method is utilized to model the rarefied gas flow of precursor particles nearby the substrate. The computation is performed for the GaAs nanowire growth via the selective-area metal-organic chemical vapor deposition. The model allows the quantitative description of the decrease of nanowire length with the increase of distance between nanowires (the so-called synergetic effect). The optimal pitch of the mask that corresponds to the maximal nanowire length is found for typical growth conditions. In particular, our calculation shows that the optimal pitch increases with the increase of the nanowire diameter.

AB - A numerical approach to the determination of gas kinetics in the case of non-planar nanostructure growth via the selective-area metal-organic chemical vapor deposition is developed. The direct simulation Monte-Carlo method is utilized to model the rarefied gas flow of precursor particles nearby the substrate. The computation is performed for the GaAs nanowire growth via the selective-area metal-organic chemical vapor deposition. The model allows the quantitative description of the decrease of nanowire length with the increase of distance between nanowires (the so-called synergetic effect). The optimal pitch of the mask that corresponds to the maximal nanowire length is found for typical growth conditions. In particular, our calculation shows that the optimal pitch increases with the increase of the nanowire diameter.

UR - http://www.scopus.com/inward/record.url?scp=85036459253&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/917/3/032036

DO - 10.1088/1742-6596/917/3/032036

M3 - Article

AN - SCOPUS:85036459253

VL - 917

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 3

M1 - 032036

ER -

ID: 11919499