TY - JOUR

T1 - Modeling catalyst-free growth of III-V nanowires: empirical and rigorous approaches

AU - Dubrovskii, Vladimir G.

N1 - Dubrovskii, V.G. Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches. Nanomaterials 2023, 13, 1253. https://doi.org/10.3390/nano13071253

PY - 2023/4/1

Y1 - 2023/4/1

N2 - Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation mechanism or selective area growth (SAG) on different substrates, including Si, show great promise for monolithic integration of III-V optoelectronics with Si electronic platform. The morphological design of NW ensembles requires advanced growth modeling, which is much less developed for catalyst-free NWs compared to vapor–liquid–solid (VLS) NWs of the same materials. Herein, we present an empirical approach for modeling simultaneous axial and radial growths of untapered catalyst-free III-V NWs and compare it to the rigorous approach based on the stationary diffusion equations for different populations of group III adatoms. We study in detail the step flow occurring simultaneously on the NW sidewalls and top and derive the general laws governing the evolution of NW length and radius versus the growth parameters. The rigorous approach is reduced to the empirical equations in particular cases. A good correlation of the model with the data on the growth kinetics of SAG GaAs NWs and self-induced GaN NWs obtained by different epitaxy techniques is demonstrated. Overall, the developed theory provides a basis for the growth modeling of catalyst-free NWs and can be further extended to more complex NW morphologies.

AB - Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation mechanism or selective area growth (SAG) on different substrates, including Si, show great promise for monolithic integration of III-V optoelectronics with Si electronic platform. The morphological design of NW ensembles requires advanced growth modeling, which is much less developed for catalyst-free NWs compared to vapor–liquid–solid (VLS) NWs of the same materials. Herein, we present an empirical approach for modeling simultaneous axial and radial growths of untapered catalyst-free III-V NWs and compare it to the rigorous approach based on the stationary diffusion equations for different populations of group III adatoms. We study in detail the step flow occurring simultaneously on the NW sidewalls and top and derive the general laws governing the evolution of NW length and radius versus the growth parameters. The rigorous approach is reduced to the empirical equations in particular cases. A good correlation of the model with the data on the growth kinetics of SAG GaAs NWs and self-induced GaN NWs obtained by different epitaxy techniques is demonstrated. Overall, the developed theory provides a basis for the growth modeling of catalyst-free NWs and can be further extended to more complex NW morphologies.

KW - III-V nanowires

KW - selective area growth

KW - Radial growth

KW - adatom diffusion

KW - nanowire length and radius

KW - modeling

KW - radial growth

UR - https://www.mendeley.com/catalogue/c835fc23-20e3-3577-b493-8f9eb5deec1a/

U2 - 10.3390/nano13071253

DO - 10.3390/nano13071253

M3 - Article

C2 - 37049346

VL - 13

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 7

M1 - 1253

ER -