Standard

Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial. / Bert, Nikolay; Ushanov, Vitaliy; Snigirev, Leonid; Kirilenko, Demid; Ulin, Vladimir; Yagovkina, Maria; Preobrazhenskii, Valeriy; Putyato, Mikhail; Semyagin, Boris; Kasatkin, Igor; Chaldyshev, Vladimir.

в: Materials, Том 15, № 21, 7597, 11.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Bert, N, Ushanov, V, Snigirev, L, Kirilenko, D, Ulin, V, Yagovkina, M, Preobrazhenskii, V, Putyato, M, Semyagin, B, Kasatkin, I & Chaldyshev, V 2022, 'Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial', Materials, Том. 15, № 21, 7597. https://doi.org/10.3390/ma15217597

APA

Bert, N., Ushanov, V., Snigirev, L., Kirilenko, D., Ulin, V., Yagovkina, M., Preobrazhenskii, V., Putyato, M., Semyagin, B., Kasatkin, I., & Chaldyshev, V. (2022). Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial. Materials, 15(21), [7597]. https://doi.org/10.3390/ma15217597

Vancouver

Bert N, Ushanov V, Snigirev L, Kirilenko D, Ulin V, Yagovkina M и пр. Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial. Materials. 2022 Нояб.;15(21). 7597. https://doi.org/10.3390/ma15217597

Author

Bert, Nikolay ; Ushanov, Vitaliy ; Snigirev, Leonid ; Kirilenko, Demid ; Ulin, Vladimir ; Yagovkina, Maria ; Preobrazhenskii, Valeriy ; Putyato, Mikhail ; Semyagin, Boris ; Kasatkin, Igor ; Chaldyshev, Vladimir. / Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial. в: Materials. 2022 ; Том 15, № 21.

BibTeX

@article{3be2e41eb798482eac0f91a0ad8c4283,
title = "Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial",
abstract = "AlGaAsSb and AlGaAs films as thick as 1 μm with Al content as high as 60% were successfully grown by low-temperature (200 °C) MBE. To overcome the well-known problem of growth disruption due to a high aluminum content and a low growth temperature, we applied intermittent growth with the temperature elevation to smooth out the emerging roughness of the growth front. Post-growth annealing of the obtained material allowed us to form a developed system of As or AsSb nanoinclusions, which occupy 0.3–0.6% of the material volume. While the As nanoinclusions are optically inactive, the AsSb nanoinclusions provide a strong optical absorption near the band edge of the semiconductor matrix due to the Fr{\"o}hlich plasmon resonance. Owing to the wider bandgap of the grown Al0.6Ga0.4As0.97Sb0.03 compound, we have expanded the spectral range available for studying the Fr{\"o}hlich plasmon resonance. The grown metamaterial represents an optically active medium of which the formation process is completely compatible with the epitaxial growth technology of semiconductors.",
keywords = "AsSb nanoparticles, low-temperature MBE, metal-semiconductor composite, microstructure, plasmon resonance",
author = "Nikolay Bert and Vitaliy Ushanov and Leonid Snigirev and Demid Kirilenko and Vladimir Ulin and Maria Yagovkina and Valeriy Preobrazhenskii and Mikhail Putyato and Boris Semyagin and Igor Kasatkin and Vladimir Chaldyshev",
note = "Publisher Copyright: {\textcopyright} 2022 by the authors.",
year = "2022",
month = nov,
doi = "10.3390/ma15217597",
language = "English",
volume = "15",
journal = "Materials",
issn = "1996-1944",
publisher = "MDPI AG",
number = "21",

}

RIS

TY - JOUR

T1 - Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial

AU - Bert, Nikolay

AU - Ushanov, Vitaliy

AU - Snigirev, Leonid

AU - Kirilenko, Demid

AU - Ulin, Vladimir

AU - Yagovkina, Maria

AU - Preobrazhenskii, Valeriy

AU - Putyato, Mikhail

AU - Semyagin, Boris

AU - Kasatkin, Igor

AU - Chaldyshev, Vladimir

N1 - Publisher Copyright: © 2022 by the authors.

PY - 2022/11

Y1 - 2022/11

N2 - AlGaAsSb and AlGaAs films as thick as 1 μm with Al content as high as 60% were successfully grown by low-temperature (200 °C) MBE. To overcome the well-known problem of growth disruption due to a high aluminum content and a low growth temperature, we applied intermittent growth with the temperature elevation to smooth out the emerging roughness of the growth front. Post-growth annealing of the obtained material allowed us to form a developed system of As or AsSb nanoinclusions, which occupy 0.3–0.6% of the material volume. While the As nanoinclusions are optically inactive, the AsSb nanoinclusions provide a strong optical absorption near the band edge of the semiconductor matrix due to the Fröhlich plasmon resonance. Owing to the wider bandgap of the grown Al0.6Ga0.4As0.97Sb0.03 compound, we have expanded the spectral range available for studying the Fröhlich plasmon resonance. The grown metamaterial represents an optically active medium of which the formation process is completely compatible with the epitaxial growth technology of semiconductors.

AB - AlGaAsSb and AlGaAs films as thick as 1 μm with Al content as high as 60% were successfully grown by low-temperature (200 °C) MBE. To overcome the well-known problem of growth disruption due to a high aluminum content and a low growth temperature, we applied intermittent growth with the temperature elevation to smooth out the emerging roughness of the growth front. Post-growth annealing of the obtained material allowed us to form a developed system of As or AsSb nanoinclusions, which occupy 0.3–0.6% of the material volume. While the As nanoinclusions are optically inactive, the AsSb nanoinclusions provide a strong optical absorption near the band edge of the semiconductor matrix due to the Fröhlich plasmon resonance. Owing to the wider bandgap of the grown Al0.6Ga0.4As0.97Sb0.03 compound, we have expanded the spectral range available for studying the Fröhlich plasmon resonance. The grown metamaterial represents an optically active medium of which the formation process is completely compatible with the epitaxial growth technology of semiconductors.

KW - AsSb nanoparticles

KW - low-temperature MBE

KW - metal-semiconductor composite

KW - microstructure

KW - plasmon resonance

UR - http://www.scopus.com/inward/record.url?scp=85141882343&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/237be61a-cb5e-325b-8315-10123d906c61/

U2 - 10.3390/ma15217597

DO - 10.3390/ma15217597

M3 - Article

AN - SCOPUS:85141882343

VL - 15

JO - Materials

JF - Materials

SN - 1996-1944

IS - 21

M1 - 7597

ER -

ID: 100696034