Standard

Limits of III-V Nanowire Growth. / Dubrovskii, V. G. ; Sokolovskii, A. S. ; Hijazi, Hadi.

в: Technical Physics Letters, Том 46, № 9, 01.09.2020, стр. 859-863.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Dubrovskii, VG, Sokolovskii, AS & Hijazi, H 2020, 'Limits of III-V Nanowire Growth', Technical Physics Letters, Том. 46, № 9, стр. 859-863. https://doi.org/10.1134/S1063785020090035

APA

Dubrovskii, V. G., Sokolovskii, A. S., & Hijazi, H. (2020). Limits of III-V Nanowire Growth. Technical Physics Letters, 46(9), 859-863. https://doi.org/10.1134/S1063785020090035

Vancouver

Dubrovskii VG, Sokolovskii AS, Hijazi H. Limits of III-V Nanowire Growth. Technical Physics Letters. 2020 Сент. 1;46(9):859-863. https://doi.org/10.1134/S1063785020090035

Author

Dubrovskii, V. G. ; Sokolovskii, A. S. ; Hijazi, Hadi. / Limits of III-V Nanowire Growth. в: Technical Physics Letters. 2020 ; Том 46, № 9. стр. 859-863.

BibTeX

@article{6fcdde2929f44fd592070129934fbc12,
title = "Limits of III-V Nanowire Growth",
abstract = "The growth kinetics of III–V semiconductor nanowires by a vapor–liquid–solid method is theoretically analyzed. The analysis includes three concurrent processes—the deposition rate of an element of group V, penetration of atoms of group III into the droplet taking into account surface diffusion, and nucleation at the liquid–solid interface. A generalized formula for the vertical growth rate of nanowires is obtained, and it can be limited by one of the three processes. Various growth conditions with Au and Ga catalysts depending on the fluxes of elements of groups III and V and the nanowire radius are analyzed.",
keywords = "III–V nanowire, vapor–liquid–solid growth method, nucleation, surface diffusion, V/III flux ratio, III-V nanowire, MECHANISM, vapor-liquid-solid growth method, LIQUID-SOLID GROWTH, NUCLEATION, WHISKERS, GAAS",
author = "Dubrovskii, {V. G.} and Sokolovskii, {A. S.} and Hadi Hijazi",
note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd.",
year = "2020",
month = sep,
day = "1",
doi = "10.1134/S1063785020090035",
language = "English",
volume = "46",
pages = "859--863",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "9",

}

RIS

TY - JOUR

T1 - Limits of III-V Nanowire Growth

AU - Dubrovskii, V. G.

AU - Sokolovskii, A. S.

AU - Hijazi, Hadi

N1 - Publisher Copyright: © 2020, Pleiades Publishing, Ltd.

PY - 2020/9/1

Y1 - 2020/9/1

N2 - The growth kinetics of III–V semiconductor nanowires by a vapor–liquid–solid method is theoretically analyzed. The analysis includes three concurrent processes—the deposition rate of an element of group V, penetration of atoms of group III into the droplet taking into account surface diffusion, and nucleation at the liquid–solid interface. A generalized formula for the vertical growth rate of nanowires is obtained, and it can be limited by one of the three processes. Various growth conditions with Au and Ga catalysts depending on the fluxes of elements of groups III and V and the nanowire radius are analyzed.

AB - The growth kinetics of III–V semiconductor nanowires by a vapor–liquid–solid method is theoretically analyzed. The analysis includes three concurrent processes—the deposition rate of an element of group V, penetration of atoms of group III into the droplet taking into account surface diffusion, and nucleation at the liquid–solid interface. A generalized formula for the vertical growth rate of nanowires is obtained, and it can be limited by one of the three processes. Various growth conditions with Au and Ga catalysts depending on the fluxes of elements of groups III and V and the nanowire radius are analyzed.

KW - III–V nanowire

KW - vapor–liquid–solid growth method

KW - nucleation

KW - surface diffusion

KW - V/III flux ratio

KW - III-V nanowire

KW - MECHANISM

KW - vapor-liquid-solid growth method

KW - LIQUID-SOLID GROWTH

KW - NUCLEATION

KW - WHISKERS

KW - GAAS

UR - http://www.scopus.com/inward/record.url?scp=85092376779&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/aeb08084-ef5c-3f68-ada7-81bda8891161/

U2 - 10.1134/S1063785020090035

DO - 10.1134/S1063785020090035

M3 - Article

VL - 46

SP - 859

EP - 863

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 9

ER -

ID: 70924303