TY - JOUR

T1 - Layer intermixing in ultrathin Cr/Be layered system and impact of barrier layers on interface region

AU - Сахоненков, Сергей Сергеевич

AU - Филатова, Елена Олеговна

AU - Касатиков, Сергей Алексеевич

AU - Фатеева, Елизавета Сергеевна

AU - Плешков, Роман Сергеевич

AU - Полковников, Владимир Николаевич

N1 - Publisher Copyright: © 2021

PY - 2021/12/1

Y1 - 2021/12/1

N2 - Chemical composition and significance of the interfaces in Cr/Be layered structures depending on the thickness and ordering of beryllium and chromium layers were considered in details. Absence of pure Be and Cr layers and the formation of two beryllides, CrBe 12 and CrBe 2, depending on the order of layer deposition was established in the systems with layer thickness less than 2.0 nm. This fact indicates a strong layer intermixing and is explained by both the ballistic layer intermixing and surface-free energy minimization processes. Insertion of an ultrathin barrier layer (Si, C, B 4C) between the ultrathin base layers simultaneously affects the formation of both interfaces. In the case of such ultrathin multilayer systems, the task of specific interface engineering by a barrier layer insertion appears to become much more complicated due to the strong layer intermixing occurring through the deposition process and further diffusion. Both interfaces are inseparable and a chemical change in one inevitably causes a chemical change in the second.

AB - Chemical composition and significance of the interfaces in Cr/Be layered structures depending on the thickness and ordering of beryllium and chromium layers were considered in details. Absence of pure Be and Cr layers and the formation of two beryllides, CrBe 12 and CrBe 2, depending on the order of layer deposition was established in the systems with layer thickness less than 2.0 nm. This fact indicates a strong layer intermixing and is explained by both the ballistic layer intermixing and surface-free energy minimization processes. Insertion of an ultrathin barrier layer (Si, C, B 4C) between the ultrathin base layers simultaneously affects the formation of both interfaces. In the case of such ultrathin multilayer systems, the task of specific interface engineering by a barrier layer insertion appears to become much more complicated due to the strong layer intermixing occurring through the deposition process and further diffusion. Both interfaces are inseparable and a chemical change in one inevitably causes a chemical change in the second.

KW - Ballistic collisions

KW - Barrier layer

KW - Interface quality

KW - Intermixing

KW - Layer mutual penetration

KW - Ultrathin multilayer structure

KW - XPS

KW - CARBON

KW - RAY

KW - MULTILAYERS

KW - MIRRORS

UR - http://www.scopus.com/inward/record.url?scp=85114132197&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2021.151114

DO - 10.1016/j.apsusc.2021.151114

M3 - Article

VL - 570

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 151114

ER -