Research output: Contribution to journal › Article › peer-review
Layer intermixing in ultrathin Cr/Be layered system and impact of barrier layers on interface region. / Сахоненков, Сергей Сергеевич; Филатова, Елена Олеговна; Касатиков, Сергей Алексеевич; Фатеева, Елизавета Сергеевна; Плешков, Роман Сергеевич; Полковников, Владимир Николаевич.
In: Applied Surface Science, Vol. 570, 151114, 01.12.2021.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Layer intermixing in ultrathin Cr/Be layered system and impact of barrier layers on interface region
AU - Сахоненков, Сергей Сергеевич
AU - Филатова, Елена Олеговна
AU - Касатиков, Сергей Алексеевич
AU - Фатеева, Елизавета Сергеевна
AU - Плешков, Роман Сергеевич
AU - Полковников, Владимир Николаевич
N1 - Publisher Copyright: © 2021
PY - 2021/12/1
Y1 - 2021/12/1
N2 - Chemical composition and significance of the interfaces in Cr/Be layered structures depending on the thickness and ordering of beryllium and chromium layers were considered in details. Absence of pure Be and Cr layers and the formation of two beryllides, CrBe 12 and CrBe 2, depending on the order of layer deposition was established in the systems with layer thickness less than 2.0 nm. This fact indicates a strong layer intermixing and is explained by both the ballistic layer intermixing and surface-free energy minimization processes. Insertion of an ultrathin barrier layer (Si, C, B 4C) between the ultrathin base layers simultaneously affects the formation of both interfaces. In the case of such ultrathin multilayer systems, the task of specific interface engineering by a barrier layer insertion appears to become much more complicated due to the strong layer intermixing occurring through the deposition process and further diffusion. Both interfaces are inseparable and a chemical change in one inevitably causes a chemical change in the second.
AB - Chemical composition and significance of the interfaces in Cr/Be layered structures depending on the thickness and ordering of beryllium and chromium layers were considered in details. Absence of pure Be and Cr layers and the formation of two beryllides, CrBe 12 and CrBe 2, depending on the order of layer deposition was established in the systems with layer thickness less than 2.0 nm. This fact indicates a strong layer intermixing and is explained by both the ballistic layer intermixing and surface-free energy minimization processes. Insertion of an ultrathin barrier layer (Si, C, B 4C) between the ultrathin base layers simultaneously affects the formation of both interfaces. In the case of such ultrathin multilayer systems, the task of specific interface engineering by a barrier layer insertion appears to become much more complicated due to the strong layer intermixing occurring through the deposition process and further diffusion. Both interfaces are inseparable and a chemical change in one inevitably causes a chemical change in the second.
KW - Ballistic collisions
KW - Barrier layer
KW - Interface quality
KW - Intermixing
KW - Layer mutual penetration
KW - Ultrathin multilayer structure
KW - XPS
KW - CARBON
KW - RAY
KW - MULTILAYERS
KW - MIRRORS
UR - http://www.scopus.com/inward/record.url?scp=85114132197&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2021.151114
DO - 10.1016/j.apsusc.2021.151114
M3 - Article
VL - 570
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
M1 - 151114
ER -
ID: 85038002