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Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries. / Filatova, Elena O.; Konashuk, Aleksei S.

в: Journal of Physical Chemistry C, Том 119, № 35, 2015, стр. 20755-20761.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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@article{e120c95ec5de47be9970faf7fcd15516,
title = "Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries",
abstract = "{\textcopyright} 2015 American Chemical Society.The valence and conduction bands of am- and γ-Al2O3 films grown by the atomic layer deposition technique were studied simultaneously in identical experimental conditions using high-resolution near -edge X-ray absorption fine structure and soft X-ray photoelectron spectroscopy. The valence band maximum was found to be centered at 3.64 ± 0.04 eV for am-Al2O3 and 3.47 ± 0.04 eV for γ-Al2O3. The band gap of Al2O3 was determined to be 7.0 ± 0.1 and 7.6 ± 0.1 eV for measured am- and γ-Al2O3, respectively. The main role in changing the band gap belongs to a shift of the bottom of conduction band depending on Al2O3 crystalline form. The position of the bottom of the conduction band is governed by the charge transfer from Al atom to the oxygen that depends strongly on the Al atom coordination symmetries. A strong p-d hybridization allowed for Td",
author = "Filatova, {Elena O.} and Konashuk, {Aleksei S.}",
year = "2015",
doi = "10.1021/acs.jpcc.5b06843",
language = "English",
volume = "119",
pages = "20755--20761",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "35",

}

RIS

TY - JOUR

T1 - Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries

AU - Filatova, Elena O.

AU - Konashuk, Aleksei S.

PY - 2015

Y1 - 2015

N2 - © 2015 American Chemical Society.The valence and conduction bands of am- and γ-Al2O3 films grown by the atomic layer deposition technique were studied simultaneously in identical experimental conditions using high-resolution near -edge X-ray absorption fine structure and soft X-ray photoelectron spectroscopy. The valence band maximum was found to be centered at 3.64 ± 0.04 eV for am-Al2O3 and 3.47 ± 0.04 eV for γ-Al2O3. The band gap of Al2O3 was determined to be 7.0 ± 0.1 and 7.6 ± 0.1 eV for measured am- and γ-Al2O3, respectively. The main role in changing the band gap belongs to a shift of the bottom of conduction band depending on Al2O3 crystalline form. The position of the bottom of the conduction band is governed by the charge transfer from Al atom to the oxygen that depends strongly on the Al atom coordination symmetries. A strong p-d hybridization allowed for Td

AB - © 2015 American Chemical Society.The valence and conduction bands of am- and γ-Al2O3 films grown by the atomic layer deposition technique were studied simultaneously in identical experimental conditions using high-resolution near -edge X-ray absorption fine structure and soft X-ray photoelectron spectroscopy. The valence band maximum was found to be centered at 3.64 ± 0.04 eV for am-Al2O3 and 3.47 ± 0.04 eV for γ-Al2O3. The band gap of Al2O3 was determined to be 7.0 ± 0.1 and 7.6 ± 0.1 eV for measured am- and γ-Al2O3, respectively. The main role in changing the band gap belongs to a shift of the bottom of conduction band depending on Al2O3 crystalline form. The position of the bottom of the conduction band is governed by the charge transfer from Al atom to the oxygen that depends strongly on the Al atom coordination symmetries. A strong p-d hybridization allowed for Td

U2 - 10.1021/acs.jpcc.5b06843

DO - 10.1021/acs.jpcc.5b06843

M3 - Article

VL - 119

SP - 20755

EP - 20761

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 35

ER -

ID: 3942842