TY - JOUR

T1 - Influence of silicon interlayers on transition layer formation in Ti/Ni multilayer structures of different thicknesses

AU - Сахоненков, Сергей Сергеевич

AU - Гайсин, Айдар Уралович

AU - Конашук, Алексей Сергеевич

AU - Бугаев, Александр Викторович

AU - Плешков, Роман Сергеевич

AU - Полковников, Владимир Николаевич

AU - Филатова, Елена Олеговна

PY - 2025/12/1

Y1 - 2025/12/1

N2 - This study presents a comprehensive investigation of chemical, structural, and magnetic properties of Ti/Ni multilayer systems with period thicknesses of 4 nm and 10 nm. Particular attention was paid to the characterization of the transition layers at Ni–Ti interfaces and the influence of thin silicon barrier layers on their formation. A combination of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), X-ray reflectometry (XRR), and SQUID magnetometry was employed for analysis. Extended transition layers up to 1.2 nm in thickness were identified at the Ni–Ti interfaces, primarily composed of the intermetallic Ni3Ti phase. The insertion of ultra-thin silicon buffer layers at the interfaces significantly suppressed the formation of intermetallic compounds, most likely due to the formation of titanium silicides. Additionally, it was observed that the use of Si layer on the sample surface leads to the formation of silicon oxide after exposure to the ambient environment, which acts as a passivation layer and inhibits oxidation of Ni and Ti layers within the topmost period of the multilayer structure.

AB - This study presents a comprehensive investigation of chemical, structural, and magnetic properties of Ti/Ni multilayer systems with period thicknesses of 4 nm and 10 nm. Particular attention was paid to the characterization of the transition layers at Ni–Ti interfaces and the influence of thin silicon barrier layers on their formation. A combination of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), X-ray reflectometry (XRR), and SQUID magnetometry was employed for analysis. Extended transition layers up to 1.2 nm in thickness were identified at the Ni–Ti interfaces, primarily composed of the intermetallic Ni3Ti phase. The insertion of ultra-thin silicon buffer layers at the interfaces significantly suppressed the formation of intermetallic compounds, most likely due to the formation of titanium silicides. Additionally, it was observed that the use of Si layer on the sample surface leads to the formation of silicon oxide after exposure to the ambient environment, which acts as a passivation layer and inhibits oxidation of Ni and Ti layers within the topmost period of the multilayer structure.

KW - Buffer layer

KW - Chemical interaction

KW - Multilayer structure

KW - Ti/Ni

KW - Transition layers

UR - https://www.mendeley.com/catalogue/8d158ffa-8418-370d-a6d7-b788ba39edc3/

U2 - 10.1016/j.jpcs.2025.113003

DO - 10.1016/j.jpcs.2025.113003

M3 - Article

VL - 207

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

SN - 0022-3697

M1 - 113003

ER -