Spatially offset Raman spectrа (SORS) were obtained from the surface layer of a 9,10-diphenylanthracene (DPA) single crystal with 785 nm laser. Most of the Raman spectra correspond to the most common crystal structure of DPA - the α-polymorph. On the basis of differences in Raman spectra measured on the surface of a single crystal were found some "Abnormal zones" with the structure of the γ-polymorph. These zones covered only several percent of the full surface. Spectral studies by the SORS method in the region of anomalous zones showed that in the deeper near-surface layers of the crystal, the γ-polymorph transforms into the α-polymorph structure. The prolonged laser irradiation of the "Abnormal zones" with measuring of Raman spectra showed that a photoinduced transition of the DPA crystal structure from the γ-polymorph to the α-polymorph took place in the focal region of the lens of the Raman spectrometer. The proposed approach can be useful for controlling the photoinduced change in the characteristics of the surface layers of organic semiconductor structures formed by epitaxial growth.